P

Inventor

HUANG PAN

CN34 patents
⚠️ This page may combine multiple inventors who share the name “HUANG PAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

24 patents
US11963356B2Apr 16, 2024

Three-dimensional memory device without gate line slits and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11271007B2Mar 8, 2022

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD3 citations73
US11257831B2Feb 22, 2022

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD3 citations73
US11251195B2Feb 15, 2022

Three-dimensional memory device without gate line slits and method for forming the same

YANGTZE MEMORY TECH CO LTD4 citations73
US11211394B2Dec 28, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD3 citations73
US11183512B2Nov 23, 2021

Methods for forming three-dimensional memory device with support structure and resulting three-dimensional memory device

YANGTZE MEMORY TECH CO LTD2 citations73
US11114458B2Sep 7, 2021

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11094712B2Aug 17, 2021

Three-dimensional memory device with support structures in slit structures and method for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US11043565B2Jun 22, 2021

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations71
US12052871B2Jul 30, 2024

Three-dimensional memory and fabrication method thereof

YANGTZE MEMORY TECH CO LTD1 citations62
US12035523B2Jul 9, 2024

Three-dimensional memory devices and fabricating methods thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11805650B2Oct 31, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11785772B2Oct 10, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11765897B2Sep 19, 2023

Three-dimensional memory device without gate line slits and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11758723B2Sep 12, 2023

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11716850B2Aug 1, 2023

Three-dimensional memory device with support structures in gate line slits and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11653495B2May 16, 2023

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11437398B2Sep 6, 2022

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11127757B2Sep 21, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11101286B2Aug 24, 2021

Three-dimensional memory device with source structure and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11094713B2Aug 17, 2021

Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11792980B2Oct 17, 2023

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11411014B2Aug 9, 2022

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61
US11195853B2Dec 7, 2021

Contact structures having conductive portions in substrate in three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations61

SHENZHEN HAOYI ELECTRONIC TECH CO LTD

3 patents

HUANG PAN

3 patents

VIVO MOBILE COMMUNICATION CO LTD

2 patents

UNIV HUBEI

1 patent

ZTE CORP

1 patent