Inventor

HOTEIDA MASAYUKI

JP4 patents

⚠️ This page may combine multiple inventors who share the name “HOTEIDA MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ARAKI MASAHIRO

1 patent

US8963165B2Feb 24, 2015

Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element

ARAKI MASAHIRO11 citations79

SHARP KK

1 patent

US9111839B2Aug 18, 2015

Epitaxial wafer for heterojunction type field effect transistor

SHARP KK4 citations68

PANASONIC CORP

1 patent

US11186922B2Nov 30, 2021

Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

PANASONIC CORP1 citations56

PANASONIC HOLDINGS CORP

1 patent

US11879184B2Jan 23, 2024

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

PANASONIC HOLDINGS CORP0 citations48