Inventor

LIU YANXIANG

CN61 patents

⚠️ This page may combine multiple inventors who share the name “LIU YANXIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU YANXIANG

GLOBALFOUNDRIES INC

Fabricating fin-type field effect transistor with punch-through stop region

Embedded DRAM in replacement metal gate technology

Modified tunneling field effect transistors and fabrication methods

Embedded selector-less one-time programmable non-volatile memory

FinFET conformal junction and high EPI surface dopant concentration method and device

Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage

Advanced faraday shield for a semiconductor device

Containment structure for epitaxial growth in non-planar semiconductor structure

Silicon-on-insulator finFET with bulk source and drain

Epitaxially forming a set of fins in a semiconductor device

Semiconductor device having local buried oxide

Modified tunneling field effect transistors and fabrication methods

Methods of making a self-aligned channel drift device

Silicon-on-insulator finFET with bulk source and drain

FinFET semiconductor device having local buried oxide

Self-aligned channel drift device and methods of making such a device

Forming tunneling field-effect transistor with stacking fault and resulting device

Integrated circuits with programmable electrical connections and methods for fabricating the same

Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate

Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)

FinFET conformal junction and high epi surface dopant concentration method and device

FinFET conformal junction and abrupt junction with reduced damage method and device

FinFET conformal junction and abrupt junction with reduced damage method and device

Epitaxially forming a set of fins in a semiconductor device

QUALCOMM INC

Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure

Device and method to connect gate regions separated using a gate cut

FinFET device and method of making the same

FinFET with cut gate stressor

Contact for semiconductor device

Systems, methods, and apparatus for improved finFETs

Fin field effect transistor (FET) (FinFET) complementary metal oxide semiconductor (CMOS) circuits employing single and double diffusion breaks for increased performance

Method and apparatus for selectively forming nitride caps on metal gate

Off-center gate cut

Layout effect mitigation in FinFET

Method for mitigating layout effect in FINFET

Structure and method for tunable memory cells including fin field effect transistors

LIU YANXIANG

Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents

Transistor with reduced parasitic capacitance

Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate

Shallow trench isolation extension

Self-adjusting latch-up resistance for CMOS devices

FINFET compatible PC-bounded ESD diode

HUAWEI TECH CO LTD

Memory and electronic device

Memory

GLOBAL FOUNDRIES INC

MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse element

SPANSION LLC

Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb

SENNICS CO LTD

Compound having anti-aging and discoloration resistance effects and preparation method therefor

IBM

Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer

GLOBALFOUNDRIES SG PTE LTD

Method for forming N-shaped bottom stress liner

CRRC TANGSHAN CO LTD

Railway vehicle and storage battery circuit breaker box thereof