Inventor

LEE HSIN-YI

TW111 patents

⚠️ This page may combine multiple inventors who share the name “LEE HSIN-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE HSIN-YI

TAIWAN SEMICONDUCTOR MFG CO LTD

Transistor gate structures and methods of forming the same

Gate structures in transistors and method of forming same

Transistor gates and method of forming

Selective etching to increase threshold voltage spread

Methods for pre-deposition treatment of a work-function metal layer

Atomic layer deposition methods and structures thereof

Semiconductor device and manufacturing method thereof

Atomic layer deposition methods and structures thereof

Gate structures in transistors and method of forming same

Gate structures in transistor devices and methods of forming same

Selective etching to increase threshold voltage spread

Nanosheet field-effect transistor device and method of forming

Nanosheet field-effect transistor device and method of forming

Transistor gate structure and method of forming

Method of forming semiconductor device

Semiconductor device and method

Transistor gates and methods of forming

Transistor gate structures and methods of forming the same

Semiconductor device and method

Transistor gate structures and methods of forming the same

Electroless plating method for metal gate fill

Semiconductor device and method

Semiconductor device and method

Metal gates and methods of forming thereby

Semiconductor device

Work function control in gate structures

Transistor gate structure and method of forming

Semiconductor device and method

Transistor gates and method of forming

Nanosheet field-effect transistor device and method of forming

Methods for threshold voltage tuning and structure formed thereby

Atomic layer deposition methods and structures thereof

Methods for threshold voltage tuning and structures formed thereby

Semiconductor device and manufacturing method thereof

Methods for pre-deposition treatment of a work-function metal layer

Gate structures in transistors and method of forming same

Semiconductor device and method of forming the same

Transistor gate structures and methods of forming the same

Semiconductor device and method of fabricating the same

Gate structures in transistors and method of forming same

Semiconductor device and method

Fluorine incorporation method for nanosheet

Gates structures of nanostructure field-effect transistors (nano-FETs) including a plurality of semiconductor based capping materials and methods of forming the same

Transistor gate structure and method of forming

Nanosheet field-effect transistor device and method of forming

Gate structure of semiconductor device and method of forming same

Semiconductor device

Gate electrode deposition and structure formed thereby

MICRO STAR INT CO LTD

Method for automatically duplicating a BIOS

TAIWAN SEMICONDUCTOR MFG

Method for forming semiconductor substrate with convex shaped active region