Inventor
CHAO HUANG-LIN
US87 patents
Patents
50 patentsUS11183574B2Nov 23, 2021
Work function layers for transistor gate electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10714395B2Jul 14, 2020
Fin isolation structure for FinFET and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US11978674B2May 7, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11626493B2Apr 11, 2023
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11594633B2Feb 28, 2023
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11581416B1Feb 14, 2023
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11177259B2Nov 16, 2021
Multi-threshold gate structure with doped gate dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11049937B2Jun 29, 2021
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11038029B2Jun 15, 2021
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11018256B2May 25, 2021
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11495471B2Nov 8, 2022
Slurry compositions for chemical mechanical planarization
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11267987B2Mar 8, 2022
Chemical mechanical polishing slurry composition and method of polishing metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11031291B2Jun 8, 2021
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11018022B2May 25, 2021
Method for forming semiconductor device structure having oxide layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11894461B2Feb 6, 2024
Dipoles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12451359B2Oct 21, 2025
Fluorine incorporation method for nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414318B2Sep 9, 2025
Fabrication of field effect transistors with ferroelectric materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12412781B2Sep 9, 2025
Method for forming a contact plug by bottom-up metal growth
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363962B2Jul 15, 2025
Isolation structures of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12278287B2Apr 15, 2025
Selective internal gate structure for ferroelectric semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12250824B2Mar 11, 2025
Ferroelectric memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12213323B2Jan 28, 2025
Embedded backside memory on a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12034058B2Jul 9, 2024
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11925033B2Mar 5, 2024
Embedded backside memory on a field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11915937B2Feb 27, 2024
Fluorine incorporation method for nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11901450B2Feb 13, 2024
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11871581B2Jan 9, 2024
Ferroelectric memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621338B2Apr 4, 2023
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11139397B2Oct 5, 2021
Self-aligned metal compound layers for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11069807B2Jul 20, 2021
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031490B2Jun 8, 2021
Fabrication of field effect transistors with ferroelectric materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10978567B2Apr 13, 2021
Gate stack treatment for ferroelectric transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12588234B2Mar 24, 2026
Semiconductor devices with implanted STI regions and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12538791B2Jan 27, 2026
Source/drain contact for semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471342B2Nov 11, 2025
NFET with aluminum-free work-function layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12441912B2Oct 14, 2025
Chemical mechanical polishing slurry composition and method of polishing metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12406859B2Sep 2, 2025
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402394B2Aug 26, 2025
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369384B2Jul 22, 2025
Semiconductor device structure including dielectric region with plurality of different oxidation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349427B2Jul 1, 2025
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266543B2Apr 1, 2025
Semiconductor device structure having gate dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261055B2Mar 25, 2025
Slurry compositions for chemical mechanical planarization
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176217B2Dec 24, 2024
Method for manufacturing a semiconductor using slurry
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12132091B2Oct 29, 2024
Work function layers for transistor gate electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080779B2Sep 3, 2024
Capping layer for gate electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040364B2Jul 16, 2024
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12024651B2Jul 2, 2024
Chemical mechanical polishing slurry composition and method of polishing metal layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12002885B2Jun 4, 2024
Gate contact and via structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908702B2Feb 20, 2024
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862681B2Jan 2, 2024
Gate structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
Showing the top 50 of 87 patents by PatentIndex Score.