Inventor

AOYAMA MASAHARU

JP19 patents

⚠️ This page may combine multiple inventors who share the name “AOYAMA MASAHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AOYAMA MASAHARU

TOKYO SHIBAURA ELECTRIC CO

Semiconductor memory device

Semiconductor device

Method for forming metallization structure having flat surface on semiconductor substrate

Method of producing semiconductor device

Semiconductor device having insulating layer including polyimide film

Semiconductor device with an improved bonding section

Semiconductor device and a method for manufacturing the same

System for etching a metal film on a semiconductor wafer

Fluorine-doped P type silicon

Method of manufacturing a semiconductor device

Semiconductor device with multi-layered metalizations

TOSHIBA KK

Method of forming trench buried wiring for semiconductor device

Semiconductor device having a multilayer wiring structure using a polyimide resin

Method of manufacturing a semiconductor device with conductive trench sidewalls

Method for planarizing the surface of an interlayer insulating film in a semiconductor device

Semiconductor device of multilayer wiring structure

Method of gettering a semiconductor device and forming an isolation region therein

Method of making multilayered interconnects using hillock studs formed by sintering

Method of controlling metal thin film formation conditions