Inventor
FRYER PETER M
US14 patents
⚠️ This page may combine multiple inventors who share the name “FRYER PETER M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS5281485AJan 25, 1994
Structure and method of making Alpha-Ta in thin films
IBM213 citations99
US5221449AJun 22, 1993
Method of making Alpha-Ta thin films
IBM206 citations99
US6791144B1Sep 14, 2004
Thin film transistor and multilayer film structure and manufacturing method of same
IBM32 citations92
US6731064B2May 4, 2004
Yield enchancement pixel structure for active matrix organic light-emitting diode displays
IBM20 citations92
US6420282B1Jul 16, 2002
Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD
IBM28 citations92
US6165917ADec 26, 2000
Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD
IBM25 citations92
US5912506AJun 15, 1999
Multi-layer metal sandwich with taper and reduced etch bias and method for forming same
IBM42 citations92
US5831283ANov 3, 1998
Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD
IBM28 citations92
US6380101B1Apr 30, 2002
Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof
IBM51 citations89
US6866791B1Mar 15, 2005
Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof
IBM17 citations82
US7037769B2May 2, 2006
Thin film transistor and multilayer film structure and manufacturing method of same
IBM9 citations74
US6632536B2Oct 14, 2003
Self-assembled monolayer etch barrier for indium-tin-oxide useful in manufacturing thin film transistor-liquid crystal displays
IBM9 citations73
US6545295B2Apr 8, 2003
Transistor having ammonia free nitride between its gate electrode and gate insulation layers
IBM5 citations73