Inventor
NAGABUSHNAM RAJAN
US6 patents
Patents
6 patentsUS6171959B1Jan 9, 2001
Method for making a semiconductor device
MOTOROLA INC55 citations94
US5888588AMar 30, 1999
Process for forming a semiconductor device
MOTOROLA INC62 citations94
US6284633B1Sep 4, 2001
Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode
MOTOROLA INC33 citations88
US6001726ADec 14, 1999
Method for using a conductive tungsten nitride etch stop layer to form conductive interconnects and tungsten nitride contact structure
MOTOROLA INC46 citations87
US6146250ANov 14, 2000
Process for forming a semiconductor device
MOTOROLA INC11 citations71
US6012970AJan 11, 2000
Process for forming a semiconductor device
MOTOROLA INC14 citations71