P

Inventor

WANG LARRY

US34 patents
⚠️ This page may combine multiple inventors who share the name “WANG LARRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

22 patents
US6037671AMar 14, 2000

Stepper alignment mark structure for maintaining alignment integrity

ADVANCED MICRO DEVICES INC107 citations98
US6171962B1Jan 9, 2001

Shallow trench isolation formation without planarization mask

ADVANCED MICRO DEVICES INC68 citations96
US5930645AJul 27, 1999

Shallow trench isolation formation with reduced polish stop thickness

ADVANCED MICRO DEVICES INC87 citations96
US6599810B1Jul 29, 2003

Shallow trench isolation formation with ion implantation

ADVANCED MICRO DEVICES INC29 citations93
US6150243ANov 21, 2000

Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer

ADVANCED MICRO DEVICES INC46 citations93
US6143624ANov 7, 2000

Shallow trench isolation formation with spacer-assisted ion implantation

ADVANCED MICRO DEVICES INC42 citations93
US6130467AOct 10, 2000

Shallow trench isolation with spacers for improved gate oxide quality

ADVANCED MICRO DEVICES INC23 citations93
US6124183ASep 26, 2000

Shallow trench isolation formation with simplified reverse planarization mask

ADVANCED MICRO DEVICES INC25 citations93
US6074927AJun 13, 2000

Shallow trench isolation formation with trench wall spacer

ADVANCED MICRO DEVICES INC37 citations93
US6238986B1May 29, 2001

Formation of junctions by diffusion from a doped film at silicidation

ADVANCED MICRO DEVICES INC33 citations92
US6162689ADec 19, 2000

Multi-depth junction formation tailored to silicide formation

ADVANCED MICRO DEVICES INC22 citations92
US6100145AAug 8, 2000

Silicidation with silicon buffer layer and silicon spacers

ADVANCED MICRO DEVICES INC47 citations92
US6096599AAug 1, 2000

Formation of junctions by diffusion from a doped film into and through a silicide during silicidation

ADVANCED MICRO DEVICES INC27 citations92
US6239031B1May 29, 2001

Stepper alignment mark structure for maintaining alignment integrity

ADVANCED MICRO DEVICES INC39 citations91
US6169005B1Jan 2, 2001

Formation of junctions by diffusion from a doped amorphous silicon film during silicidation

ADVANCED MICRO DEVICES INC16 citations84
US5970363AOct 19, 1999

Shallow trench isolation formation with improved trench edge oxide

ADVANCED MICRO DEVICES INC19 citations84
US5970362AOct 19, 1999

Simplified shallow trench isolation formation with no polish stop

ADVANCED MICRO DEVICES INC17 citations84
US6380047B1Apr 30, 2002

Shallow trench isolation formation with two source/drain masks and simplified planarization mask

ADVANCED MICRO DEVICES INC9 citations74
US6380040B1Apr 30, 2002

Prevention of dopant out-diffusion during silicidation and junction formation

ADVANCED MICRO DEVICES INC5 citations63
US6162699ADec 19, 2000

Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery

ADVANCED MICRO DEVICES INC2 citations63
US6090713AJul 18, 2000

Shallow trench isolation formation with simplified reverse planarization mask

ADVANCED MICRO DEVICES INC5 citations60
US6090712AJul 18, 2000

Shallow trench isolation formation with no polish stop

ADVANCED MICRO DEVICES INC6 citations60

SYNOPSYS INC

4 patents

FORD GLOBAL TECH LLC

3 patents

PAYPAL INC

2 patents

HE YI

1 patent

MAXIM INTEGRATED PRODUCTS

1 patent

NORTHERN TRUST CORP

1 patent