Inventor

MATSUMIYA MASATO

JP63 patents

⚠️ This page may combine multiple inventors who share the name “MATSUMIYA MASATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUMIYA MASATO

FUJITSU LTD

Semiconductor device

Semiconductor device and semiconductor system for high-speed data transfer

Variable delay circuit and semiconductor integrated circuit device

Multi-port memory based on DRAM core

Semiconductor memory device capable of driving non-selected word lines to first and second potentials

Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit

Semiconductor device

Semiconductor memory device using shared sense amplifier system

Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type

Semiconductor memory device with efficient and reliable redundancy processing

Semiconductor memory, and memory access method

DRAM for storing data in pairs of cells

Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier

Semiconductor memory device having a precharge device

Dynamic type semiconductor memory device

Semiconductor device

Semiconductor memory device

Variable delay circuit and semiconductor integrated circuit device

Semiconductor integrated circuit

Semiconductor memory device with overdriven sense amplifier and stabilized power-supply circuit of source follower type

Semiconductor integrated circuit

Memory device having row decoder

Semiconductor memory device

Electronic device and semiconductor memory device using the same

Semiconductor memory having error correction

Semiconductor integrated circuit device, and adjustment method of semiconductor integrated circuit device

Semiconductor memory device

Memory circuit being capable of compression test

Semiconductor memory device and its refresh address signal generating method adapted to reduce power consumption during refresh operation

Memory device preventing a slow operation through a mask signal

Semiconductor memory device

Semiconductor memory device for storing data in memory cells as complementary information

Semiconductor memory device and method for executing shift redundancy operation

DRAM having SRAM equivalent interface

Semiconductor memory device with concurrent refresh and data access operation

Semiconductor device and method of manufacturing the same

Semiconductor memory having a wide bus-bandwidth for input/output data

Semiconductor memory device

Semiconductor memory device having a shielding line

Semiconductor memory having sub-select lines cross-connected to sub-decoders

Memory device having direct sense circuit

Memory device with faster write operation

Memory device having row decoder

Semiconductor memory device with efficient layout

Semiconductor memory device having dual boosting circuits to reduce energy required to supply boosting voltages

Semiconductor memory

Semiconductor memory employing direct-type sense amplifiers capable of realizing high-speed access

Semiconductor integrated circuit having a pre-charged operation and a data latch function

SATO AYAKO

Multi-port memory based on DRAM core

FUJITSU SEMICONDUCTOR LTD

Multi-port memory based on DRAM core