Inventor
KAWABATA KUNINORI
JP60 patents
⚠️ This page may combine multiple inventors who share the name “KAWABATA KUNINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
40 patentsUS6172537B1Jan 9, 2001
Semiconductor device
FUJITSU LTD86 citations98
US6049239AApr 11, 2000
Variable delay circuit and semiconductor integrated circuit device
FUJITSU LTD88 citations98
US6628564B1Sep 30, 2003
Semiconductor memory device capable of driving non-selected word lines to first and second potentials
FUJITSU LTD63 citations96
US6605963B2Aug 12, 2003
Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit
FUJITSU LTD65 citations96
US6229363B1May 8, 2001
Semiconductor device
FUJITSU LTD69 citations96
US5862094AJan 19, 1999
Semiconductor device and a semiconductor memory device
FUJITSU LTD60 citations96
US7196956B2Mar 27, 2007
Semiconductor memory device changing refresh interval depending on temperature
FUJITSU LTD30 citations94
US7467337B2Dec 16, 2008
Semiconductor memory device
FUJITSU LTD39 citations92
US7373564B2May 13, 2008
Semiconductor memory
FUJITSU LTD21 citations92
US7184296B2Feb 27, 2007
Memory device
FUJITSU LTD19 citations92
US7079443B2Jul 18, 2006
Semiconductor device
FUJITSU LTD18 citations92
US6377101B1Apr 23, 2002
Variable delay circuit and semiconductor integrated circuit device
FUJITSU LTD19 citations92
US6201378B1Mar 13, 2001
Semiconductor integrated circuit
FUJITSU LTD36 citations92
US6111802AAug 29, 2000
Semiconductor memory device
FUJITSU LTD23 citations92
US5936912AAug 10, 1999
Electronic device and semiconductor memory device using the same
FUJITSU LTD48 citations92
US7366971B2Apr 29, 2008
Semiconductor memory having sub-party cell array error correction
FUJITSU LTD20 citations84
US6643805B1Nov 4, 2003
Memory circuit being capable of compression test
FUJITSU LTD17 citations84
US6195304B1Feb 27, 2001
Semiconductor memory device and its refresh address signal generating method adapted to reduce power consumption during refresh operation
FUJITSU LTD16 citations84
US6072749AJun 6, 2000
Memory device preventing a slow operation through a mask signal
FUJITSU LTD19 citations84
US7227801B2Jun 5, 2007
Semiconductor memory device with reliable fuse circuit
FUJITSU LTD10 citations83
US7281155B1Oct 9, 2007
Semiconductor memory device and method for executing shift redundancy operation
FUJITSU LTD7 citations74
US6714438B2Mar 30, 2004
Semiconductor device with high speed latch operation
FUJITSU LTD9 citations74
US6600688B2Jul 29, 2003
Semiconductor memory and method of operating the same
FUJITSU LTD7 citations74
US6522003B1Feb 18, 2003
Semiconductor device and method of manufacturing the same
FUJITSU LTD7 citations74
US6252269B1Jun 26, 2001
Semiconductor memory device
FUJITSU LTD8 citations74
US6212091B1Apr 3, 2001
Semiconductor memory device having a shielding line
FUJITSU LTD14 citations74
US6115284ASep 5, 2000
Memory device with faster write operation
FUJITSU LTD9 citations74
US6052301AApr 18, 2000
Semiconductor memory device
FUJITSU LTD10 citations74
US5943253AAug 24, 1999
Semiconductor memory device with efficient layout
FUJITSU LTD11 citations74
US7212453B2May 1, 2007
Semiconductor memory having an error correction function
FUJITSU LTD8 citations73
US6147919ANov 14, 2000
Semiconductor memory employing direct-type sense amplifiers capable of realizing high-speed access
FUJITSU LTD13 citations73
US6141274AOct 31, 2000
Semiconductor integrated circuit having a pre-charged operation and a data latch function
FUJITSU LTD8 citations73
US7453754B2Nov 18, 2008
Semiconductor memory device changing refresh interval depending on temperature
FUJITSU LTD5 citations72
US7286434B2Oct 23, 2007
Semiconductor memory device with shift register-based refresh address generation circuit
FUJITSU LTD7 citations72
US7145825B2Dec 5, 2006
Semiconductor memory device with shift register-based refresh address generation circuit
FUJITSU LTD5 citations72
US7307885B2Dec 11, 2007
Multi-value nonvolatile semiconductor memory device equipped with reference cell and load balancing circuit
FUJITSU LTD2 citations63
US6477074B2Nov 5, 2002
Semiconductor memory integrated circuit having high-speed data read and write operations
FUJITSU LTD4 citations63
US6226203B1May 1, 2001
Memory device
FUJITSU LTD2 citations63
US6188625B1Feb 13, 2001
Semiconductor memory
FUJITSU LTD3 citations63
US6130849AOct 10, 2000
Semiconductor memory device and data bus amplifier activation method for the semiconductor memory device
FUJITSU LTD3 citations62
FUJITSU SEMICONDUCTOR LTD
4 patentsUS8867293B2Oct 21, 2014
Semiconductor memory device changing refresh interval depending on temperature
FUJITSU SEMICONDUCTOR LTD4 citations82
US7911874B2Mar 22, 2011
Semiconductor integrated circuit
FUJITSU SEMICONDUCTOR LTD5 citations63
US7916568B2Mar 29, 2011
Semiconductor memory device changing refresh interval depending on temperature
FUJITSU SEMICONDUCTOR LTD1 citations61
US7827463B2Nov 2, 2010
Semiconductor memory device
FUJITSU SEMICONDUCTOR LTD2 citations61
TOSHIBA KK
2 patentsFUJITSU MICROELECTRONICS LTD
2 patentsKAWABATA KUNINORI
2 patentsShowing the top 50 of 60 patents by PatentIndex Score.