P

Inventor

INOUE KEN

JP69 patents
⚠️ This page may combine multiple inventors who share the name “INOUE KEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

15 patents
US6232224B1May 15, 2001

Method of manufacturing semiconductor device having reliable contact structure

NEC CORP38 citations93
US6221764B1Apr 24, 2001

Manufacturing method of semiconductor device

NEC CORP28 citations93
US6136699AOct 24, 2000

Method of manufacturing semiconductor device using phase transition

NEC CORP31 citations93
US5950083ASep 7, 1999

Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure

NEC CORP36 citations93
US5780361AJul 14, 1998

Salicide process for selectively forming a monocobalt disilicide film on a silicon region

NEC CORP55 citations93
US5937300AAug 10, 1999

Semiconductor apparatus and fabrication method thereof

NEC CORP40 citations92
US5741725AApr 21, 1998

Fabrication process for semiconductor device having MOS type field effect transistor

NEC CORP30 citations92
US5661052AAug 26, 1997

Method of fabricating semiconductor device having low-resistance gate electrode and diffusion layers

NEC CORP32 citations92
US6316362B1Nov 13, 2001

Method for manufacturing semiconductor device

NEC CORP8 citations74
US6309515B1Oct 30, 2001

Sputtering apparatus for sputtering high melting point metal and method for manufacturing semiconductor device having high melting point metal

NEC CORP8 citations73
US6211059B1Apr 3, 2001

Method of manufacturing semiconductor device having contacts with different depths

NEC CORP12 citations73
US6114765ASep 5, 2000

C49-structured tungsten-containing titanium salicide structure and method of forming the same

NEC CORP9 citations73
US6069045AMay 30, 2000

Method of forming C49-structure tungsten-containing titanium salicide structure

NEC CORP5 citations73
US5880505AMar 9, 1999

C49-structured tungsten-containing titanium salicide structure

NEC CORP11 citations73
US6548421B1Apr 15, 2003

Method for forming a refractory-metal-silicide layer in a semiconductor device

NEC CORP4 citations62

IBM

13 patents

NEC ELECTRONICS CORP

7 patents

SEIKO EPSON CORP

5 patents

INOUE KEN

3 patents

HITACHI METALS LTD

2 patents

TOKYO ELECTRON LTD

1 patent

RENESAS ELECTRONICS CORP

1 patent

SHOWA DENKO KK

1 patent

DOWA MINING CO

1 patent

TOSHIBA KK

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.