Inventor
HAGIWARA RYOJI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “HAGIWARA RYOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SII NANOTECHNOLOGY INC
8 patentsUS7375352B2May 20, 2008
Photomask defect correction method employing a combined device of a focused electron beam device and an atomic force microscope
SII NANOTECHNOLOGY INC9 citations83
US7018683B2Mar 28, 2006
Electron beam processing method
SII NANOTECHNOLOGY INC16 citations83
US6891171B1May 10, 2005
Method for repairing a phase shift mask and a focused ion beam apparatus for carrying out method
SII NANOTECHNOLOGY INC13 citations83
US7488961B2Feb 10, 2009
Charged particle beam irradiation method and charged particle beam apparatus
SII NANOTECHNOLOGY INC2 citations60
US7485880B2Feb 3, 2009
Charged particle beam scan and irradiation method, charged particle beam apparatus, workpiece observation method and workpiece processing method
SII NANOTECHNOLOGY INC2 citations60
US7927769B2Apr 19, 2011
Method for fabricating EUVL mask
SII NANOTECHNOLOGY INC1 citations51
US7576340B2Aug 18, 2009
Focused ion beam processing method
SII NANOTECHNOLOGY INC0 citations51
US6780551B2Aug 24, 2004
Charged particle processing for forming pattern boundaries at a uniform thickness
SII NANOTECHNOLOGY INC0 citations51
FUJITSU LTD
7 patentsUS5608670AMar 4, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD66 citations96
US5576637ANov 19, 1996
XOR CMOS logic gate
FUJITSU LTD40 citations96
US4937830AJun 26, 1990
Semiconductor memory device having function of checking and correcting error of read-out data
FUJITSU LTD70 citations96
US5770963AJun 23, 1998
Flash memory with improved erasability and its circuitry
FUJITSU LTD19 citations92
US5592419AJan 7, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD23 citations92
US5631597AMay 20, 1997
Negative voltage circuit for a flash memory
FUJITSU LTD10 citations82
US5249156ASep 28, 1993
Semiconductor memory device having non-volatile and volatile memory cells
FUJITSU LTD7 citations73