Inventor
SECK MARTIN
DE14 patents
⚠️ This page may combine multiple inventors who share the name “SECK MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
13 patentsUS7619309B2Nov 17, 2009
Integrated connection arrangements
INFINEON TECHNOLOGIES AG49 citations93
US8367514B2Feb 5, 2013
Integrated circuit with capacitor and method for the production thereof
INFINEON TECHNOLOGIES AG9 citations83
US7667256B2Feb 23, 2010
Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement
INFINEON TECHNOLOGIES AG8 citations82
US7371650B2May 13, 2008
Method for producing a transistor structure
INFINEON TECHNOLOGIES AG7 citations73
US8003475B2Aug 23, 2011
Method for fabricating a transistor structure
INFINEON TECHNOLOGIES AG2 citations62
US7964494B2Jun 21, 2011
Integrated connection arrangements
INFINEON TECHNOLOGIES AG3 citations61
US7692266B2Apr 6, 2010
Integrated circuit with capacitor and method for the production thereof
INFINEON TECHNOLOGIES AG3 citations61
US7656037B2Feb 2, 2010
Integrated circuit with improved component interconnections
INFINEON TECHNOLOGIES AG4 citations61
US7968416B2Jun 28, 2011
Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method
INFINEON TECHNOLOGIES AG3 citations59
US7592648B2Sep 22, 2009
Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method
INFINEON TECHNOLOGIES AG4 citations59
US7038255B2May 2, 2006
Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method
INFINEON TECHNOLOGIES AG4 citations59
US7091100B2Aug 15, 2006
Polysilicon bipolar transistor and method of manufacturing it
INFINEON TECHNOLOGIES AG0 citations51
US7060583B2Jun 13, 2006
Method for manufacturing a bipolar transistor having a polysilicon emitter
INFINEON TECHNOLOGIES AG0 citations40