Inventor
FRANOSCH MARTIN
DE48 patents
⚠️ This page may combine multiple inventors who share the name “FRANOSCH MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
24 patentsUS7288435B2Oct 30, 2007
Method for producing a cover, method for producing a packaged device
INFINEON TECHNOLOGIES AG89 citations97
US6909141B2Jun 21, 2005
Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component
INFINEON TECHNOLOGIES AG13 citations84
US6635545B2Oct 21, 2003
Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor
INFINEON TECHNOLOGIES AG13 citations84
US7692317B2Apr 6, 2010
Apparatus for housing a micromechanical structure
INFINEON TECHNOLOGIES AG8 citations82
US7300823B2Nov 27, 2007
Apparatus for housing a micromechanical structure and method for producing the same
INFINEON TECHNOLOGIES AG14 citations82
US6878600B2Apr 12, 2005
Method for fabricating trench capacitors and semiconductor device with trench capacitors
INFINEON TECHNOLOGIES AG11 citations74
US6863769B2Mar 8, 2005
Configuration and method for making contact with the back surface of a semiconductor substrate
INFINEON TECHNOLOGIES AG7 citations74
US7612430B2Nov 3, 2009
Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
INFINEON TECHNOLOGIES AG7 citations73
US7234237B2Jun 26, 2007
Method for producing a protective cover for a device
INFINEON TECHNOLOGIES AG8 citations73
US6955950B2Oct 18, 2005
Method for generating a protective cover for a device
INFINEON TECHNOLOGIES AG9 citations73
US6939734B2Sep 6, 2005
Method for producing a protective cover for a device
INFINEON TECHNOLOGIES AG7 citations73
US6605487B2Aug 12, 2003
Method for the manufacture of micro-mechanical components
INFINEON TECHNOLOGIES AG10 citations67
US7947552B2May 24, 2011
Process for the simultaneous deposition of crystalline and amorphous layers with doping
INFINEON TECHNOLOGIES AG2 citations63
US7064360B2Jun 20, 2006
Bipolar transistor and method for fabricating it
INFINEON TECHNOLOGIES AG2 citations63
US6867105B2Mar 15, 2005
Bipolar transistor and method of fabricating a bipolar transistor
INFINEON TECHNOLOGIES AG4 citations63
US6746880B2Jun 8, 2004
Method for making electrical contact with a rear side of a semiconductor substrate during its processing
INFINEON TECHNOLOGIES AG2 citations63
US7682777B2Mar 23, 2010
Method for producing a polymer structure on a substrate surface
INFINEON TECHNOLOGIES AG2 citations62
US8884437B2Nov 11, 2014
Electrical device with protruding contact elements and overhang regions over a cavity
INFINEON TECHNOLOGIES AG0 citations52
US7851333B2Dec 14, 2010
Apparatus comprising a device and method for producing it
INFINEON TECHNOLOGIES AG0 citations52
US7135757B2Nov 14, 2006
Bipolar transistor
INFINEON TECHNOLOGIES AG1 citations52
US6903454B2Jun 7, 2005
Contact spring configuration for contacting a semiconductor wafer and method for producing a contact spring configuration
INFINEON TECHNOLOGIES AG1 citations52
US6548846B2Apr 15, 2003
Storage capacitor for a DRAM
INFINEON TECHNOLOGIES AG0 citations52
US9312212B2Apr 12, 2016
Method for housing an electronic component in a device package and an electronic component housed in the device package
INFINEON TECHNOLOGIES AG0 citations51
US6552385B2Apr 22, 2003
DRAM memory capacitor having three-layer dielectric, and method for its production
INFINEON TECHNOLOGIES AG0 citations51
SIEMENS AG
14 patentsUS5998807ADec 7, 1999
Integrated CMOS circuit arrangement and method for the manufacture thereof
SIEMENS AG179 citations98
US6215140B1Apr 10, 2001
Electrically programmable non-volatile memory cell configuration
SIEMENS AG64 citations96
US6040995AMar 21, 2000
Method of operating a storage cell arrangement
SIEMENS AG35 citations93
US5943571AAug 24, 1999
Method for manufacturing fine structures
SIEMENS AG25 citations93
US6197666B1Mar 6, 2001
Method for the fabrication of a doped silicon layer
SIEMENS AG21 citations92
US6159815ADec 12, 2000
Method of producing a MOS transistor
SIEMENS AG39 citations92
US6127220AOct 3, 2000
Manufacturing method for a capacitor in an integrated storage circuit
SIEMENS AG29 citations92
US6204119B1Mar 20, 2001
Manufacturing method for a capacitor in an integrated memory circuit
SIEMENS AG19 citations84
US6117790ASep 12, 2000
Method for fabricating a capacitor for a semiconductor memory configuration
SIEMENS AG16 citations84
US6140177AOct 31, 2000
Process of forming a semiconductor capacitor including forming a hemispherical grain statistical mask with silicon and germanium
SIEMENS AG13 citations74
US6133126AOct 17, 2000
Method for fabricating a dopant region
SIEMENS AG9 citations74
US6022786AFeb 8, 2000
Method for manufacturing a capacitor for a semiconductor arrangement
SIEMENS AG15 citations74
US5817553AOct 6, 1998
Process for manufacturing capacitors in a solid state configuration
SIEMENS AG12 citations74
US6194765B1Feb 27, 2001
Integrated electrical circuit having at least one memory cell and method for fabricating it
SIEMENS AG2 citations63
OPPERMANN KLAUS-GUENTER
4 patentsUS8501534B2Aug 6, 2013
Method for housing an electronic component in a device package and an electronic component housed in the device package
OPPERMANN KLAUS-GUENTER2 citations60
US8319344B2Nov 27, 2012
Electrical device with protruding contact elements and overhang regions over a cavity
OPPERMANN KLAUS-GUENTER0 citations51
US8618621B2Dec 31, 2013
Semiconductor device layer structure and method of fabrication
OPPERMANN KLAUS-GUENTER0 citations50
US8148055B2Apr 3, 2012
Method for developing a photoresist
OPPERMANN KLAUS-GUENTER0 citations40