Inventor

LEE MOON-SOOK

KR36 patents

⚠️ This page may combine multiple inventors who share the name “LEE MOON-SOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE MOON-SOOK

SAMSUNG ELECTRONICS CO LTD

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same

Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same

Ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof

Resistive memory cells and devices having asymmetrical contacts

Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Nonvolatile memory devices and methods of manufacturing the same

Showerheads for providing a gas to a substrate and apparatus

Methods for forming a ferroelectric layer and capacitor and FRAM using the same

Biosensor using nanoscale material as transistor channel and method of fabricating the same

Resistive memory cell, method for forming the same and resistive memory array using the same

CMOS transistor and method of manufacturing the same

Methods of manufacturing memory units, and methods of manufacturing semiconductor devices

Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue

Method of forming ferroelectric random access memory device

Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same

Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same

Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the same

Methods of forming ferroelectric memory devices

Thin film transistors

Organic memory devices including organic material and fullerene layers

Methods of forming ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof

Nonvolatile memory devices and methods of fabricating the same

Ferroelectric capacitors with metal oxide for inhibiting fatigue

Integrated circuit devices including an intaglio pattern

JEON SANG-HUN

Semiconductor devices having channel layer patterns on a gate insulation layer

Thin film transistors and methods of manufacturing thin film transistors

Methods of manufacturing CMOS transistor

LEE MOON-SOOK

Methods of manufacturing semiconductor devices

Methods of manufacturing semiconductor devices

Memory units and related semiconductor devices including nanowires

SAMSUNG ELECCTRONICS CO LTD

Resistive memory cells and devices having asymmetrical contacts

BAEK IN-GYU

Resistive memory cells and devices having asymmetrical contacts

CHO BYEONG-OK

Polymer memory device and method of forming the same

HONG SEUNG HUN

Field-effect transistor and sensor based on the same