Inventor
SUIZU YASUMASA
JP9 patents
Patents
9 patentsUS6784508B2Aug 31, 2004
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
TOSHIBA KK65 citations96
US7306994B2Dec 11, 2007
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
TOSHIBA KK15 citations92
US5279973AJan 18, 1994
Rapid thermal annealing for semiconductor substrate by using incoherent light
TOSHIBA KK45 citations91
US7947610B2May 24, 2011
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
TOSHIBA KK10 citations84
US7303946B1Dec 4, 2007
Method of manufacturing a semiconductor device using an oxidation process
TOSHIBA KK13 citations84
US7425480B2Sep 16, 2008
Semiconductor device and method of manufacture thereof
TOSHIBA KK5 citations73
US7312138B2Dec 25, 2007
Semiconductor device and method of manufacture thereof
TOSHIBA KK1 citations62
US7544593B2Jun 9, 2009
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
TOSHIBA KK1 citations60
US6759314B1Jul 6, 2004
Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films
TOSHIBA KK5 citations60