Inventor

KATTI ROMNEY R

US82 patents

⚠️ This page may combine multiple inventors who share the name “KATTI ROMNEY R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KATTI ROMNEY R

HONEYWELL INT INC

Multilayer structures for magnetic shielding

Reduced switching-energy magnetic elements

MRAM cell with multiple storage elements

Separate write and read access architecture for a magnetic tunnel junction

Architectures for CPP ring shaped (RS) devices

Bias-adjusted magnetoresistive devices for magnetic random access memory (MRAM) applications

Magnetic switching with expanded hard-axis magnetization volume at magnetoresistive bit ends

Magneto-resistive random access memory cell with spin-dependent diffusion and state transfer

Pseudo tunnel junction

Nonvolatile memory with data clearing functionality

Separate write and read access architecture for a magnetic tunnel junction

Antiferromagnetic stabilized storage layers in GMRAM storage devices

Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications

Accelerometer using magnetic tunnel junction

Magnetic tunnel junction based programmable memory cell

Magnetic tunnel junction based memory device

Stacking arrangement for integration of multiple integrated circuits

Magnetic field sensing using magnetoresistive random access memory (MRAM) cells

Method for fabricating giant magnetoresistive (GMR) devices

Magnetic spin hall effect spintronic accelerometer

MICRON TECHNOLOGY INC

Spintronic devices with integrated transistors

Methods for providing a magnetic shield for an integrated circuit having magnetoresistive memory cells

Shielding arrangement to protect a circuit from stray magnetic fields

Magneto-resistive memory array

Shielding arrangement to protect a circuit from stray magnetic fields

Magneto-resistive memory array

Magneto-resistive memory with shared wordline and sense line

Magneto-resistive bit structure and method of manufacture therefor

Antiferromagnetically stabilized pseudo spin valve for memory applications

Shielding arrangement to protect a circuit from stray magnetic fields

State save-on-power-down using GMR non-volatile elements

Spintronic devices with integrated transistors

State save-on-power-down using GMR non-volatile elements

Antiferromagnetically stabilized pseudo spin valve for memory applications

Magneto-resistive memory array

Method for manufacture of magneto-resistive bit structure

KATTI ROMNEY R

Spintronic devices with integrated transistors

Magnetic logic gate

Magnetic shielding for multi-chip module packaging

Selection device for a spin-torque transfer magnetic random access memory

Multilayer structures for magnetic shielding

Tamper-resistant MRAM utilizing chemical alteration

Magnetic field sensing using magnetoresistive random access memory (MRAM) cells

CALIFORNIA INST OF TECHN

Non-volatile magnetic random access memory

Nonvolatile random access memory

Integrated semiconductor-magnetic random access memory system

Integrated semiconductor-magnetic random access memory system

Vertical bloch line memory

NASA

High speed magneto-resistive random access memory

US ARMY

Integrated, nonvolatile, high-speed analog random access memory