Inventor
DIEM BERNARD
FR33 patents
⚠️ This page may combine multiple inventors who share the name “DIEM BERNARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
25 patentsUS5576250ANov 19, 1996
Process for the production of accelerometers using silicon on insulator technology
COMMISSARIAT ENERGIE ATOMIQUE128 citations98
US5965968AOct 12, 1999
Electrostatic motor
COMMISSARIAT ENERGIE ATOMIQUE72 citations96
US5912499AJun 15, 1999
Pressure transducer comprising a sealed transducer with a rigid diaphragm
COMMISSARIAT ENERGIE ATOMIQUE55 citations95
US5780885AJul 14, 1998
Accelerometers using silicon on insulator technology
COMMISSARIAT ENERGIE ATOMIQUE55 citations95
US5510276AApr 23, 1996
Process for producing a pressure transducer using silicon-on-insulator technology
COMMISSARIAT ENERGIE ATOMIQUE95 citations95
US5495761AMar 5, 1996
Integrated accelerometer with a sensitive axis parallel to the substrate
COMMISSARIAT ENERGIE ATOMIQUE57 citations94
US4715930ADec 29, 1987
Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof
COMMISSARIAT ENERGIE ATOMIQUE33 citations92
US6546801B2Apr 15, 2003
Micro-machined mechanical structure and device incorporating the structure
COMMISSARIAT ENERGIE ATOMIQUE33 citations88
US6001666ADec 14, 1999
Manufacturing process of strain gauge sensor using the piezoresistive effect
COMMISSARIAT ENERGIE ATOMIQUE28 citations87
US8011244B2Sep 6, 2011
Microsystem, and more particularly a microgyrometer, includes at least two mechanically coupled oscillating masses
COMMISSARIAT ENERGIE ATOMIQUE11 citations84
US7631558B2Dec 15, 2009
Microsystem, more particularly microgyrometer, with capacitive electrode detection element
COMMISSARIAT ENERGIE ATOMIQUE8 citations84
US4950058AAug 21, 1990
Active matrix color display screen without crossing of address line conductors and command column conductors
COMMISSARIAT ENERGIE ATOMIQUE22 citations82
US4587720AMay 13, 1986
Process for the manufacture of a self-aligned thin-film transistor
COMMISSARIAT ENERGIE ATOMIQUE17 citations72
US7572053B2Aug 11, 2009
Tightness test for MEMS or for small encapsulated components
COMMISSARIAT ENERGIE ATOMIQUE7 citations71
US9187320B2Nov 17, 2015
Method for etching a complex pattern
COMMISSARIAT ENERGIE ATOMIQUE3 citations63
US8349660B2Jan 8, 2013
Cavity closure process for at least one microelectronic device
COMMISSARIAT ENERGIE ATOMIQUE4 citations62
US7993949B2Aug 9, 2011
Heterogeneous substrate including a sacrificial layer, and a method of fabricating it
COMMISSARIAT ENERGIE ATOMIQUE6 citations62
US7790615B2Sep 7, 2010
Electronic component packaging
COMMISSARIAT ENERGIE ATOMIQUE1 citations52
US7443002B2Oct 28, 2008
Encapsulated microstructure and method of producing one such microstructure
COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US7700457B2Apr 20, 2010
Method and zone for sealing between two microstructure substrates
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US7569152B2Aug 4, 2009
Method for separating a useful layer and component obtained by said method
COMMISSARIAT ENERGIE ATOMIQUE0 citations49
US7830027B2Nov 9, 2010
Level realignment following an epitaxy step
COMMISSARIAT ENERGIE ATOMIQUE0 citations45
US10290721B2May 14, 2019
Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillar
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10422713B2Sep 24, 2019
Pressure sensor suited to measuring pressure in an aggressive environment
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10320097B2Jun 11, 2019
Electrical connectors having a bent main body for electrical connection between a housing and a support, and being disposed as a grid array or network
COMMISSARIAT ENERGIE ATOMIQUE0 citations38