Inventor

LIU LINLIN

US32 patents

⚠️ This page may combine multiple inventors who share the name “LIU LINLIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU LINLIN

POWER INTEGRATIONS INC

Protective insulator for HFET devices

High-electron-mobility transistors

Gallium nitride semiconductor device

Contact plug for high-voltage devices

High quality GaN high-voltage HFETs on silicon

Asymmetrical plug technique for GaN devices

Protective insulator for HFET devices

Asymmetrical plug technique for GaN devices

Protective insulator for HFET devices

Protective insulator for HFET devices

Asymmetrical plug technique for GaN devices

Method of fabricating a transistor

High-electron-mobility transistors

High quality GaN high-voltage HFETs on silicon

Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure

Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes

Layout design for a high power, GaN-based FET having interdigitated electrodes

High-quality GaN high-voltage HFETs on silicon

EMCORE CORP

PIN photodiode structure and fabrication process for reducing dielectric delamination

Deposition pattern for eliminating backside metal peeling during die separation in semiconductor device fabrication

Method for eliminating backside metal peeling during die separation

PIN diode structure with zinc diffusion region

PIN diode structure with zinc diffusion region

VELOX SEMICONDUCTOR CORP

Lateral conduction Schottky diode with plural mesas

Non-activated guard ring for semiconductor devices

Low doped layer for nitride-based semiconductor device

Gallium nitride semiconductor device

RAMDANI JAMAL

GaN high voltage HFET with passivation plus gate dielectric multilayer structure

High quality GaN high-voltage HFETS on silicon

LIU LINLIN

Layout design for a high power, GaN-based FET

ZHEJIANG PREAIR ELECTRICAL APPLIANCE IND CO LTD

Dehumidifier

SHANGHAI IC R&D CT CO LTD

Test structure and method for judging de-embedding accuracy of RF devices by using an introduced device