Inventor

UEMATSU KOJI

JP72 patents

⚠️ This page may combine multiple inventors who share the name “UEMATSU KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UEMATSU KOJI

SUMITOMO ELECTRIC INDUSTRIES

Nitride semiconductor wafer

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Single crystal GaN substrate, method of growing same and method of producing same

Nitride semiconductor substrate and method of producing same

III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate

Single crystal GaN substrate semiconductor device

Fabrication method and fabrication apparatus of group III nitride crystal substance

Light emitting device

GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

Nitride semiconductor substrate and method of producing same

Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device

Method of producing a nitride semiconductor device and nitride semiconductor device

Group III-V crystal and manufacturing method thereof

Light emitting apparatus

Semiconductor light-emitting device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Composite of III-nitride crystal on laterally stacked substrates

Method of manufacturing III-nitride crystal

III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device

Fabrication method and fabrication apparatus of group III nitride crystal substance

Growth method of GaN crystal, and GaN crystal substrate

Group III-V crystal

Nitride single crystal and producing method thereof

Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate

Group III nitride crystal and method of its growth

UEMATSU KOJI

Traction control device

Group III nitride crystal and method for producing the same

Vehicle speed estimator and traction control device

Traction control device

Traction control device

Traction control device

Traction control apparatus

Vehicle speed estimator and traction control device

Traction control apparatus

KOMATSU MFG CO LTD

System for controlling operation of cylinder of vehicle

Antilock brake system control device and method

Retarder control device for working vehicle

Device for preventing wheel lock of vehicle

Traction control device

MIZUHARA NAHO

Group-III nitride crystal composite

Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal

FUJIWARA SHINSUKE

GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof

Method of manufacturing GaN-based film

NAKAHATA SEIJI

III-V compound crystal and semiconductor electronic circuit element

III-V compound crystal and semiconductor electronic circuit element

KOBE STEEL LTD

Heat-collecting member and agricultural house