Inventor

APPENZELLER JOERG

US25 patents

⚠️ This page may combine multiple inventors who share the name “APPENZELLER JOERG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPENZELLER JOERG

IBM

Self-aligned nanotube field effect transistor and method of fabricating same

Method of fabricating a tunneling nanotube field effect transistor

Method and apparatus for fabricating a carbon nanotube transistor

Self-aligned nanotube field effect transistor

Carbon nanotube based integrated semiconductor circuit

Vertical nanotube field effect transistor

Method for fabricating a nanotube field effect transistor

Self-aligned nanotube field effect transistor and method of fabricating same

Piezoelectric array with strain dependant conducting elements and method therefor

Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics

Carbon nanotube based integrated semiconductor circuit

Core-shell nanowire transistor

Method and apparatus for fabricating a carbon nanotube transistor

Semiconductor nanostructures, semiconductor devices, and methods of making same

Semiconductor nanostructures, semiconductor devices, and methods of making same

Semiconductor nanostructures, semiconductor devices, and methods of making same

APPENZELLER JOERG

Method of fabricating self-aligned nanotube field effect transistor

Self-aligned nanotube field effect transistor

Organic ferroelectric material based random access memory

Carbon nanotube based integrated semiconductor circuit

Semiconductor nanostructures, semiconductor devices, and methods of making same

PURDUE RESEARCH FOUNDATION

Phase transition based resistive random-access memory

Graphene-based frequency tripler

Cross-coupled gated tunnel diode (XTD) device with increased peak-to-valley current ratio (PVCR)

Phase transition based resistive random-access memory