Inventor
CHEN CHUNG-HSIEN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHUNG-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
9 patentsUS8796666B1Aug 5, 2014
MOS devices with strain buffer layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG1,210 citations99
US9048317B2Jun 2, 2015
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG6 citations84
US7423347B2Sep 9, 2008
In-situ deposition for cu hillock suppression
TAIWAN SEMICONDUCTOR MFG7 citations74
US8963251B2Feb 24, 2015
Semiconductor device with strain technique
TAIWAN SEMICONDUCTOR MFG5 citations73
US9236253B2Jan 12, 2016
Strained structure of a semiconductor device
TAIWAN SEMICONDUCTOR MFG2 citations63
US9087903B2Jul 21, 2015
Buffer layer omega gate
TAIWAN SEMICONDUCTOR MFG3 citations63
US9379108B2Jun 28, 2016
Contact structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG0 citations52
US9093531B2Jul 28, 2015
Fin structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG1 citations52
US7659198B2Feb 9, 2010
In-situ deposition for Cu hillock suppression
TAIWAN SEMICONDUCTOR MFG1 citations52
DESICCANT TECHNOLOGY CORP
4 patentsUS12031718B2Jul 9, 2024
System and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor
DESICCANT TECHNOLOGY CORP0 citations55
US11767976B2Sep 26, 2023
System and method to prevent the oxidizer overheating using cold side bypass for a VOCs treatment system with series rotor
DESICCANT TECHNOLOGY CORP0 citations55
US12031719B2Jul 9, 2024
System and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCS treatment system with series rotor
DESICCANT TECHNOLOGY CORP0 citations44
US11761626B2Sep 19, 2023
System and method to prevent the oxidizer overheating using cold side bypass during high input for a VOCs treatment system with series rotor
DESICCANT TECHNOLOGY CORP0 citations44