Inventor
YUN JANG-GN
KR59 patents
⚠️ This page may combine multiple inventors who share the name “YUN JANG-GN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS10115667B2Oct 30, 2018
Semiconductor device with an interconnection structure having interconnections with an interconnection density that decreases moving away from a cell semiconductor pattern
SAMSUNG ELECTRONICS CO LTD20 citations94
US10903234B2Jan 26, 2021
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD10 citations86
US10796991B2Oct 6, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations84
US10797068B2Oct 6, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations84
US9853045B2Dec 26, 2017
Semiconductor device having channel holes
SAMSUNG ELECTRONICS CO LTD7 citations84
US9165611B2Oct 20, 2015
Wiring structures for three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US10763222B2Sep 1, 2020
Three-dimensional semiconductor devices having vertical structures of different lengths
SAMSUNG ELECTRONICS CO LTD8 citations83
US11205663B2Dec 21, 2021
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11189632B2Nov 30, 2021
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11074981B2Jul 27, 2021
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11011543B2May 18, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations73
US10910398B2Feb 2, 2021
Semiconductor devices and methods for forming the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10872901B2Dec 22, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10804292B2Oct 13, 2020
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10566342B2Feb 18, 2020
Semiconductor memory devices including a stress relief region
SAMSUNG ELECTRONICS CO LTD2 citations73
US10446580B2Oct 15, 2019
Memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9721965B2Aug 1, 2017
Non-volatile memory device having vertical cell
SAMSUNG ELECTRONICS CO LTD3 citations73
US10332900B2Jun 25, 2019
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD5 citations71
US12334157B2Jun 17, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations63
US11950420B2Apr 2, 2024
Memory device
SAMSUNG ELECTRONICS CO LTD0 citations63
US11776631B2Oct 3, 2023
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations63
US11574923B2Feb 7, 2023
Three-dimensional semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US10892272B2Jan 12, 2021
Semiconductor memory devices including a stress relief region
SAMSUNG ELECTRONICS CO LTD1 citations63
US8907398B2Dec 9, 2014
Gate structure in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
USRE50137ESep 17, 2024
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12022653B2Jun 25, 2024
Semiconductor devices and methods for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11817387B2Nov 14, 2023
Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level
SAMSUNG ELECTRONICS CO LTD0 citations62
US11728220B2Aug 15, 2023
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11342263B2May 24, 2022
Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level
SAMSUNG ELECTRONICS CO LTD0 citations62
US11127679B2Sep 21, 2021
Semiconductor device including dummy patterns and peripheral interconnection patterns at the same level
SAMSUNG ELECTRONICS CO LTD0 citations62
US10204901B2Feb 12, 2019
Semiconductor devices including resistors
SAMSUNG ELECTRONICS CO LTD1 citations61
US9401209B2Jul 26, 2016
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations61
YUN JANG-GN
6 patentsUS9786676B2Oct 10, 2017
Vertical memory devices and methods of manufacturing the same
YUN JANG-GN15 citations92
US9728549B2Aug 8, 2017
Semiconductor devices and methods for forming the same
YUN JANG-GN10 citations84
US9099347B2Aug 4, 2015
Three-dimensional semiconductor memory devices and method of fabricating the same
YUN JANG-GN16 citations84
US8587052B2Nov 19, 2013
Semiconductor devices and methods of fabricating the same
YUN JANG-GN13 citations84
US8674429B2Mar 18, 2014
Gate structure in non-volatile memory device
YUN JANG-GN2 citations63
US9184174B2Nov 10, 2015
Semiconductor devices and methods of fabricating semiconductor devices
YUN JANG-GN2 citations61
LIM JOON-SUNG
2 patentsSHIM SUNIL
2 patentsLIM JOON SUNG
2 patentsYUN JANG GN
2 patentsYOON HYUN SOOK
1 patentPARK SU JIN
1 patentPARK BYUNG GOOK
1 patentPARK SE-JUN
1 patentShowing the top 50 of 59 patents by PatentIndex Score.