Inventor
YOON SANGYONG
KR35 patents
⚠️ This page may combine multiple inventors who share the name “YOON SANGYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS8355280B2Jan 15, 2013
Data storage system having multi-bit memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US9875793B2Jan 23, 2018
Storage and programming method thereof
SAMSUNG ELECTRONICS CO LTD10 citations84
US9613687B2Apr 4, 2017
Memory, memory controller, memory system, method of memory, memory controller and memory system
SAMSUNG ELECTRONICS CO LTD12 citations84
US9032272B2May 12, 2015
Memory systems and block copy methods thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9064582B2Jun 23, 2015
Nonvolatile memory devices and methods of programming nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD13 citations83
US9064545B2Jun 23, 2015
Nonvolatile memory device having adjustable program pulse width
SAMSUNG ELECTRONICS CO LTD7 citations83
US8355279B2Jan 15, 2013
Nonvolatile memory device and system, and method of programming a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD12 citations83
US9280420B2Mar 8, 2016
Memory systems and block copy methods thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US9741441B2Aug 22, 2017
Nonvolatile memory system including nonvolatile memory device and memory controller and operating method of memory controller
SAMSUNG ELECTRONICS CO LTD3 citations72
US9466390B2Oct 11, 2016
Nonvolatile memory system and programming method including a reprogram operation using a page buffer to reduce data load operations
SAMSUNG ELECTRONICS CO LTD2 citations60
US12153812B2Nov 26, 2024
Memory device including one-time programmable block and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations58
US11817158B2Nov 14, 2023
Operation method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations56
US11527296B2Dec 13, 2022
Operation method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations56
US12367944B2Jul 22, 2025
Memory device including test pad connection circuit
SAMSUNG ELECTRONICS CO LTD1 citations55
US8964468B2Feb 24, 2015
Data storage system having multi-bit memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations52
YOON SANGYONG
9 patentsUS8576622B2Nov 5, 2013
Non-volatile memory device and read method thereof
YOON SANGYONG30 citations92
US8339854B2Dec 25, 2012
Nonvolatile memory device and data randomizing method thereof
YOON SANGYONG13 citations83
US9910607B2Mar 6, 2018
Method of managing a memory, and a memory system
YOON SANGYONG3 citations73
US8788908B2Jul 22, 2014
Data storage system having multi-bit memory device and on-chip buffer program method thereof
YOON SANGYONG5 citations73
US10490285B2Nov 26, 2019
Storage device including nonvolatile memory device and read method thereof
YOON SANGYONG6 citations71
US8976587B2Mar 10, 2015
Data storage system having multi-bit memory device and operating method thereof
YOON SANGYONG3 citations62
US8902666B2Dec 2, 2014
Programming method for nonvolatile memory device
YOON SANGYONG2 citations62
US9026749B2May 5, 2015
Data storage system having multi-bit memory device and on-chip buffer program method thereof
YOON SANGYONG1 citations52
US9176861B2Nov 3, 2015
System including data storage device, and data storage device including first and second memory regions
YOON SANGYONG0 citations40
JOO SANG-HYUN
3 patentsKIM KYUNGRYUN
3 patentsUS9378137B2Jun 28, 2016
Storage and programming method thereof
KIM KYUNGRYUN13 citations83
US9449695B2Sep 20, 2016
Nonvolatile memory system including nonvolatile memory device and memory controller and operating method of memory controller
KIM KYUNGRYUN9 citations82
US9312016B2Apr 12, 2016
Multi-level cell memory device and method of operating multi-level cell memory device
KIM KYUNGRYUN1 citations51