Inventor
XU QIUXIA
CN49 patents
⚠️ This page may combine multiple inventors who share the name “XU QIUXIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YIN HUAXIANG
15 patentsUS8466028B2Jun 18, 2013
Method for manufacturing multigate device
YIN HUAXIANG10 citations84
US8652891B1Feb 18, 2014
Semiconductor device and method of manufacturing the same
YIN HUAXIANG10 citations83
US8754482B2Jun 17, 2014
Semiconductor device and manufacturing method thereof
YIN HUAXIANG6 citations73
US9384986B2Jul 5, 2016
Dual-metal gate CMOS devices and method for manufacturing the same
YIN HUAXIANG6 citations72
US8994119B2Mar 31, 2015
Semiconductor device with gate stacks having stress and method of manufacturing the same
YIN HUAXIANG6 citations72
US9276085B2Mar 1, 2016
Semiconductor structure and method for manufacturing the same
YIN HUAXIANG3 citations69
US8664119B2Mar 4, 2014
Semiconductor device manufacturing method
YIN HUAXIANG3 citations61
US8324061B2Dec 4, 2012
Method for manufacturing semiconductor device
YIN HUAXIANG2 citations61
US9312187B2Apr 12, 2016
Semiconductor device and method of manufacturing the same
YIN HUAXIANG1 citations52
US9548387B2Jan 17, 2017
Semiconductor device and method of manufacturing the same
YIN HUAXIANG1 citations51
US9281398B2Mar 8, 2016
Semiconductor structure and method for manufacturing the same
YIN HUAXIANG0 citations51
US10068990B2Sep 4, 2018
Method of manufacturing MOS transistor with stack of cascaded nanowires
YIN HUAXIANG1 citations50
US8652893B2Feb 18, 2014
Semiconductor device and manufacturing method thereof
YIN HUAXIANG0 citations42
US8703617B2Apr 22, 2014
Method for planarizing interlayer dielectric layer
YIN HUAXIANG0 citations40
US8748272B2Jun 10, 2014
Method of introducing strain into channel and device manufactured by using the method
YIN HUAXIANG0 citations34
INST OF MICROELECTRONICS CAS
13 patentsUS8361869B2Jan 29, 2013
Method for manufacturing suspended fin and gate-all-around field effect transistor
INST OF MICROELECTRONICS CAS25 citations92
US8384162B2Feb 26, 2013
Device having adjustable channel stress and method thereof
INST OF MICROELECTRONICS CAS7 citations84
US8367558B2Feb 5, 2013
Method for tuning the work function of a metal gate of the PMOS device
INST OF MICROELECTRONICS CAS9 citations83
US9391073B2Jul 12, 2016
FinFET device and method for manufacturing the same
INST OF MICROELECTRONICS CAS13 citations82
US9373622B2Jun 21, 2016
CMOS device with improved accuracy of threshold voltage adjustment and method for manufacturing the same
INST OF MICROELECTRONICS CAS5 citations72
US9196706B2Nov 24, 2015
Method for manufacturing P-type MOSFET
INST OF MICROELECTRONICS CAS2 citations62
US9136181B2Sep 15, 2015
Method for manufacturing semiconductor device
INST OF MICROELECTRONICS CAS3 citations62
US9899270B2Feb 20, 2018
Methods for manufacturing semiconductor devices
INST OF MICROELECTRONICS CAS1 citations52
US9934975B2Apr 3, 2018
N-type MOSFET and method for manufacturing the same
INST OF MICROELECTRONICS CAS0 citations51
US9252059B2Feb 2, 2016
Method for manufacturing semiconductor device
INST OF MICROELECTRONICS CAS1 citations51
US10056261B2Aug 21, 2018
P type MOSFET
INST OF MICROELECTRONICS CAS0 citations41
US9029225B2May 12, 2015
Method for manufacturing N-type MOSFET
INST OF MICROELECTRONICS CAS0 citations41
US8377769B2Feb 19, 2013
Method for integrating replacement gate in semiconductor device
INST OF MICROELECTRONICS CAS0 citations41
XU QIUXIA
11 patentsUS8298927B2Oct 30, 2012
Method of adjusting metal gate work function of NMOS device
XU QIUXIA9 citations82
US8748250B2Jun 10, 2014
Method for integration of dual metal gates and dual high-K dielectrics in CMOS devices
XU QIUXIA4 citations71
US8334205B2Dec 18, 2012
Method for removing polymer after etching gate stack structure of high-K gate dielectric/metal gate
XU QIUXIA2 citations62
US8258063B2Sep 4, 2012
Method for manufacturing a metal gate electrode/high K dielectric gate stack
XU QIUXIA4 citations62
US9049061B2Jun 2, 2015
CMOS device and method for manufacturing the same
XU QIUXIA1 citations51
US8598002B2Dec 3, 2013
Method for manufacturing metal gate stack structure in gate-first process
XU QIUXIA1 citations51
US8338084B2Dec 25, 2012
Patterning method
XU QIUXIA0 citations51
US8278026B2Oct 2, 2012
Method for improving electron-beam
XU QIUXIA0 citations51
US8574977B2Nov 5, 2013
Method for manufacturing stack structure of PMOS device and adjusting gate work function
XU QIUXIA0 citations41
US8822292B2Sep 2, 2014
Method for forming and controlling molecular level SiO2 interface layer
XU QIUXIA0 citations40
US8530302B2Sep 10, 2013
Method for manufacturing CMOS FET
XU QIUXIA0 citations40
ZHOU HUAJIE
4 patentsUS8932927B2Jan 13, 2015
Semiconductor structure and method for manufacturing the same
ZHOU HUAJIE13 citations82
US8778744B2Jul 15, 2014
Method for manufacturing semiconductor field effect transistor
ZHOU HUAJIE7 citations82
US8389367B2Mar 5, 2013
Method for manufacturing a semiconductor device
ZHOU HUAJIE8 citations82
US8895374B2Nov 25, 2014
Semiconductor field-effect transistor structure and method for manufacturing the same
ZHOU HUAJIE0 citations50
SHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE
3 patentsUS11694901B2Jul 4, 2023
Field-effect transistor and method for manufacturing the same
SHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE0 citations62
US11217694B2Jan 4, 2022
Field-effect transistor and method for manufacturing the same
SHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE1 citations62
US11387149B2Jul 12, 2022
Semiconductor device and method for forming gate structure thereof
SHANGHAI INDUSTRIAL MTECHNOLOGY RES INSTITUTE0 citations51