Inventor

SIM SANG-PIL

KR30 patents

⚠️ This page may combine multiple inventors who share the name “SIM SANG-PIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIM SANG-PIL

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Multilayer passivation process for forming air gaps within a dielectric between interconnections

Method for manufacturing a semiconductor memory device having a capacitor with increased effective area

Method for manufacturing a multiple walled capacitor of a semiconductor device

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Method for manufacturing a semiconductor wiring structure including a self-aligned contact hole

Method for forming triple well in semiconductor device

Method of forming a pattern

Flash memory device and program method thereof

Highly integrated semiconductor wiring structure

Flash memory device and program method thereof

Manufacturing method for semiconductor memory device having a storage node with surface irregularities

Multilevel integrated circuit devices and methods of forming the same

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Flash memory devices including a pass transistor

Methods of fabricating microelectronic devices having increased impurity concentration between a metal silicide contact surface

Microelectronic devices having increased impurity concentration between a metal silicide contact surface

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Cell arrays of memory devices having extended source strapping regions

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Fabrication method and structure for providing a recessed channel in a nonvolatile memory device

Contactless nonvolatile memory device and method of forming the same

Semiconductor devices including raised source/drain stressors and methods of manufacturing the same

MAEDA SHIGENOBU

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices having fin shaped channels

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins