Inventor
HONG SOO-HUN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “HONG SOO-HUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS8878309B1Nov 4, 2014
Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels
SAMSUNG ELECTRONICS CO LTD105 citations97
US9379106B2Jun 28, 2016
Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
SAMSUNG ELECTRONICS CO LTD18 citations92
US9299811B2Mar 29, 2016
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations83
US11011511B2May 18, 2021
Electrostatic discharge protection devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10269928B2Apr 23, 2019
Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
SAMSUNG ELECTRONICS CO LTD3 citations72
US10002943B2Jun 19, 2018
Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels
SAMSUNG ELECTRONICS CO LTD4 citations72
US12336242B2Jun 17, 2025
Semiconductor devices including protruding insulation portions between active fins
SAMSUNG ELECTRONICS CO LTD0 citations62
US11955517B2Apr 9, 2024
Semiconductor devices including protruding insulation portions between active fins
SAMSUNG ELECTRONICS CO LTD0 citations62
US12074157B2Aug 27, 2024
Electrostatic discharge protection devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US10861934B2Dec 8, 2020
Semiconductor devices including protruding insulation portions between active fins
SAMSUNG ELECTRONICS CO LTD0 citations52
US10319814B2Jun 11, 2019
Semiconductor devices including protruding insulation portions between active fins
SAMSUNG ELECTRONICS CO LTD0 citations52
US11482523B2Oct 25, 2022
Semiconductor devices with fin-shaped active regions and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations47
MAEDA SHIGENOBU
3 patentsUS8836046B2Sep 16, 2014
Semiconductor devices including protruding insulation portions between active fins
MAEDA SHIGENOBU19 citations92
US9419077B2Aug 16, 2016
Semiconductor devices including protruding insulation portions between active fins
MAEDA SHIGENOBU1 citations62
US9627483B2Apr 18, 2017
Semiconductor devices including protruding insulation portions between active fins
MAEDA SHIGENOBU0 citations52