Inventor

NGA YIANG AUN

SG14 patents

⚠️ This page may combine multiple inventors who share the name “NGA YIANG AUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

12 patents

US9583499B1Feb 28, 2017

Devices with embedded non-volatile memory and metal gates and methods for fabricating the same

GLOBALFOUNDRIES SG PTE LTD22 citations90

US10109638B1Oct 23, 2018

Embedded non-volatile memory (NVM) on fully depleted silicon-on-insulator (FD-SOI) substrate

GLOBALFOUNDRIES SG PTE LTD10 citations83

US9793394B1Oct 17, 2017

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

GLOBALFOUNDRIES SG PTE LTD10 citations81

US9698200B2Jul 4, 2017

Magnetism-controllable dummy structures in memory device

GLOBALFOUNDRIES SG PTE LTD2 citations72

US10211336B2Feb 19, 2019

LDMOS transistor structures and integrated circuits including LDMOS transistor structures

GLOBALFOUNDRIES SG PTE LTD3 citations70

US12124787B2Oct 22, 2024

System and method for automatic generation of device-based design rules and corresponding design rule checking (DRC) codes

GLOBALFOUNDRIES SG PTE LTD0 citations60

US9640438B2May 2, 2017

Integrated circuits with inactive gates and methods of manufacturing the same

GLOBALFOUNDRIES SG PTE LTD1 citations51

US9362128B2Jun 7, 2016

Methods for fabricating integrated circuits and components thereof

GLOBALFOUNDRIES SG PTE LTD1 citations51

US10741552B2Aug 11, 2020

Method and device for embedding flash memory and logic integration in FinFET technology

GLOBALFOUNDRIES SG PTE LTD0 citations49

US10163901B1Dec 25, 2018

Method and device for embedding flash memory and logic integration in FinFET technology

GLOBALFOUNDRIES SG PTE LTD1 citations49

US10411027B2Sep 10, 2019

Integrated circuits with memory cells and method for producing the same

GLOBALFOUNDRIES SG PTE LTD0 citations41

US9252142B2Feb 2, 2016

Integrated circuits including a resistance element and gate-last techniques for forming the integrated circuits

GLOBALFOUNDRIES SG PTE LTD0 citations41

CHARTERED SEMICONDUCTOR MFG

2 patents

US6998682B2Feb 14, 2006

Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension

CHARTERED SEMICONDUCTOR MFG9 citations71

US6905919B2Jun 14, 2005

Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension

CHARTERED SEMICONDUCTOR MFG8 citations71