Inventor
TSAI CHUN-YANG
TW40 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CHUN-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS10700070B2Jun 30, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9634134B2Apr 25, 2017
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9230647B2Jan 5, 2016
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10985316B2Apr 20, 2021
Bottom electrode structure in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations82
US10748907B2Aug 18, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10461126B2Oct 29, 2019
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10262731B2Apr 16, 2019
Device and method for forming resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9991368B2Jun 5, 2018
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9893122B2Feb 13, 2018
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9178040B2Nov 3, 2015
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11696521B2Jul 4, 2023
High electron affinity dielectric layer to improve cycling
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10879391B2Dec 29, 2020
Wakeup-free ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12389814B2Aug 12, 2025
High electron affinity dielectric layer to improve cycling
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9472596B2Oct 18, 2016
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9153672B2Oct 6, 2015
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11107528B2Aug 31, 2021
Multi-step reset technique to enlarge memory window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11631810B2Apr 18, 2023
Bottom electrode structure in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11594632B2Feb 28, 2023
Wakeup-free ferroelectric memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11315931B2Apr 26, 2022
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879310B2Dec 29, 2020
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879309B2Dec 29, 2020
Memory circuit and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10062735B2Aug 28, 2018
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9576656B2Feb 21, 2017
Device and method for setting resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9543404B2Jan 10, 2017
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9530462B2Dec 27, 2016
Memory cell with decoupled read/write path
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9520446B2Dec 13, 2016
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861547B1Dec 8, 2020
Multi-step reset technique to enlarge memory window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12482717B2Nov 25, 2025
Techniques for heat dispersion in 3D integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9576651B2Feb 21, 2017
RRAM and method of read operation for RRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8869436B2Oct 28, 2014
Resistive switching random access memory structure and method to recreate filament and recover resistance window
TAIWAN SEMICONDUCTOR MFG40 citations94
US9019743B2Apr 28, 2015
Method and structure for resistive switching random access memory with high reliable and high density
TAIWAN SEMICONDUCTOR MFG15 citations84
US9361980B1Jun 7, 2016
RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages
TAIWAN SEMICONDUCTOR MFG6 citations73
US9343151B1May 17, 2016
Resistive random access memory and method of resetting a resistive random access memory
TAIWAN SEMICONDUCTOR MFG1 citations52
US9286979B2Mar 15, 2016
Method and structure for resistive switching random access memory with high reliable and high density
TAIWAN SEMICONDUCTOR MFG0 citations52
US9286973B2Mar 15, 2016
Device and method for forming resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG0 citations52
US9087577B2Jul 21, 2015
Hybrid memory
TAIWAN SEMICONDUCTOR MFG0 citations52
US8953370B2Feb 10, 2015
Memory cell with decoupled read/write path
TAIWAN SEMICONDUCTOR MFG1 citations52