Inventor

OTOI HISAKAZU

JP21 patents

⚠️ This page may combine multiple inventors who share the name “OTOI HISAKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OTOI HISAKAZU

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device employing discrete backside openings and methods of making the same

Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the same

Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings

Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same

Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same

Three-dimensional memory device containing through-memory-level contact via structures and method of making the same

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Vertical field effect transisitors having a rectangular surround gate and method of making the same

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device with separated source lines and method of making the same

Three-dimensional memory device with separated contact regions and methods for forming the same

Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same

Three-dimensional memory device including through-memory-level via structures and methods of making the same

Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same

RENESAS TECH CORP

Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device

Semiconductor device with dummy gate electrode

YONEMOCHI YASUAKI

Method of manufacturing nonvolatile semiconductor device

Method of manufacturing nonvolatile semiconductor device