Inventor
SU CHING-HWANQ
TW76 patents
Patents
50 patentsUS10304835B1May 28, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations97
US9935173B1Apr 3, 2018
Structure and formation method of semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD37 citations94
US11404312B2Aug 2, 2022
Contact plug with impurity variation
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11289578B2Mar 29, 2022
Selective etching to increase threshold voltage spread
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations85
US10833196B2Nov 10, 2020
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10504789B1Dec 10, 2019
Pre-deposition treatment for FET technology and devices formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11949000B2Apr 2, 2024
Metal gate structures and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11742395B2Aug 29, 2023
Selective etching to increase threshold voltage spread
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US12021147B2Jun 25, 2024
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12021130B2Jun 25, 2024
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11699621B2Jul 11, 2023
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11588038B2Feb 21, 2023
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11563120B2Jan 24, 2023
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502080B2Nov 15, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11289480B2Mar 29, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11121041B2Sep 14, 2021
Methods for threshold voltage tuning and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10867869B2Dec 15, 2020
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10868013B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867845B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847637B2Nov 24, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10756087B2Aug 25, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10692770B2Jun 23, 2020
Geometry for threshold voltage tuning on semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10516034B2Dec 24, 2019
Semiconductor device and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510621B2Dec 17, 2019
Methods for threshold voltage tuning and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10510756B1Dec 17, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10504795B2Dec 10, 2019
Method for patterning a lanthanum containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10497811B2Dec 3, 2019
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10157785B2Dec 18, 2018
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11270994B2Mar 8, 2022
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11075275B2Jul 27, 2021
Metal gate fill for short-channel and long-channel semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11011611B2May 18, 2021
Semiconductor device with low resistivity contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10755938B2Aug 25, 2020
Metal gate and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12356656B2Jul 8, 2025
FinFET structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12283595B2Apr 22, 2025
Integration of multiple transistors having fin and mesa structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12033893B2Jul 9, 2024
Contact plug with impurity variation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11769694B2Sep 26, 2023
Contact plug with impurity variation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11616132B2Mar 28, 2023
Semiconductor device and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11127857B2Sep 21, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11031486B2Jun 8, 2021
Semiconductor device and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12513961B2Dec 30, 2025
Selective etching to increase threshold voltage spread
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507429B2Dec 23, 2025
Metal gate structures and methods of fabricating the same in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464801B2Nov 4, 2025
Circuit structure with gate configuration
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170280B2Dec 17, 2024
Method of manufacturing gate structure and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142530B2Nov 12, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12113120B2Oct 8, 2024
Gate electrode having a work-function layer including materials with different average grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935957B2Mar 19, 2024
Geometry for threshold voltage tuning on semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855098B2Dec 26, 2023
Semiconductor devices having dipole-inducing elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855083B2Dec 26, 2023
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728341B2Aug 15, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11502185B2Nov 15, 2022
Methods of manufacturing a gate electrode having metal layers with different average grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
Showing the top 50 of 76 patents by PatentIndex Score.