Inventor
MUN BONG WOONG
SG19 patents
Patents
19 patentsUS11862693B2Jan 2, 2024
Semiconductor devices including a drain captive structure having an air gap and methods of forming the same
GLOBALFOUNDRIES SG PTE LTD2 citations72
US11764273B2Sep 19, 2023
Semiconductor structures for galvanic isolation
GLOBALFOUNDRIES SG PTE LTD3 citations72
US11469169B2Oct 11, 2022
High voltage decoupling capacitor and integration methods
GLOBALFOUNDRIES SG PTE LTD4 citations72
US11257949B2Feb 22, 2022
Transistor devices and methods of forming transistor devices
GLOBALFOUNDRIES SG PTE LTD3 citations72
US12191351B1Jan 7, 2025
Laterally-diffused metal-oxide-semiconductor devices with an air gap
GLOBALFOUNDRIES SG PTE LTD1 citations63
US12550725B2Feb 10, 2026
Structure for galvanic isolation using dielectric-filled trench in substrate below electrode
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12538551B2Jan 27, 2026
Semiconductor structures for galvanic isolation
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11996441B2May 28, 2024
Semiconductor device for high voltage applications
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11955514B2Apr 9, 2024
Field-effect transistors with a gate structure in a dual-depth trench isolation structure
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11791392B2Oct 17, 2023
Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11791379B2Oct 17, 2023
Galvanic isolation using isolation break between redistribution layer electrodes
GLOBALFOUNDRIES SG PTE LTD1 citations62
US11456306B2Sep 27, 2022
Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11658240B2May 23, 2023
Semiconductor transistors on multi-layered substrates
GLOBALFOUNDRIES SG PTE LTD0 citations61
US11538910B2Dec 27, 2022
Field-effect transistors of semiconductor devices
GLOBALFOUNDRIES SG PTE LTD0 citations61
US12408373B1Sep 2, 2025
Device with three dimensional channel
GLOBALFOUNDRIES SG PTE LTD1 citations57
US12289913B1Apr 29, 2025
Device with metal field plate extension
GLOBALFOUNDRIES SG PTE LTD1 citations57
US12525537B2Jan 13, 2026
Transistors having backside contact structures
GLOBALFOUNDRIES SG PTE LTD0 citations55
US11502193B2Nov 15, 2022
Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer
GLOBALFOUNDRIES SG PTE LTD0 citations51
US12336220B2Jun 17, 2025
Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
GLOBALFOUNDRIES SG PTE LTD0 citations46