Inventor

KOO JEOUNG MO

SG32 patents

⚠️ This page may combine multiple inventors who share the name “KOO JEOUNG MO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOO JEOUNG MO

GLOBALFOUNDRIES SG PTE LTD

Simple and cost-free MTP structure

Semiconductor devices including a drain captive structure having an air gap and methods of forming the same

Semiconductor structures for galvanic isolation

High voltage decoupling capacitor and integration methods

Transistor devices and methods of forming transistor devices

Split gate non-volatile memory (NVM) with improved programming efficiency

VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices

High voltage Schottky diode and manufacturing method thereof

Low on resistance high voltage metal oxide semiconductor transistor

Transistor devices and methods of forming a transistor device

Integrated circuits with deep trench isolations and methods for producing the same

Structure for galvanic isolation using dielectric-filled trench in substrate below electrode

Semiconductor structures for galvanic isolation

Field-effect transistors with a gate structure in a dual-depth trench isolation structure

Galvanic isolation using isolation break between redistribution layer electrodes

Extended-drain metal-oxide-semiconductor devices with a notched gate electrode

Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes

Power trench capacitor compatible with deep trench isolation process

Dual gate LDMOS and a process of forming thereof

Structures for a laterally-diffused metal-oxide-semiconductor transistor

Transistors having backside contact structures

Semiconductor device including an n-well structure

ESD protection circuit

Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer

Power trench capacitor compatible with deep trench isolation process

Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells

SAMSUNG ELECTRONICS CO LTD

Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same

Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same

KOO JEOUNG MO

Semiconductor structure including high voltage device

Semiconductor device including an n-well structure

LOH WYE BOON

Methodology for performing post layer generation check

CHARTERED SEMICONDUCTOR MFG

Semiconductor structure including high voltage device