Inventor

YANG CHANG-TA

TW39 patents

⚠️ This page may combine multiple inventors who share the name “YANG CHANG-TA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG CHANG-TA

TAIWAN SEMICONDUCTOR MFG CO LTD

Static random access memory device with vertical FET devices

Semiconductor device with fin structures

Semiconductor memory structure

Static random access memory cell

Semiconductor device with fin structures

FinFET circuit devices with well isolation

SRAM having irregularly shaped metal lines

Semiconductor device having fin structures

Cut metal gate in memory macro edge and middle strap

Semiconductor device with fin structures

Semiconductor device having fin structures

Structure and formation method of semiconductor device with Fin structures

Semiconductor device and manufacturing method thereof

Compact electrical connection that can be used to form an SRAM cell and method of making the same

Cut metal gate in memory macro edge and middle strap

Compact electrical connection that can be used to form an SRAM cell and method of making the same

Cut metal gate in memory macro edge and middle strap

Compact electrical connection that can be used to form an SRAM cell and method of making the same

Compact electrical connection that can be used to form an SRAM cell and method of making the same

FinFET circuit devices with well isolation

Semiconductor memory structure

Well pick-up region design for improving memory macro performance

Semiconductor device having fin structures

FinFET circuit devices with well isolation

Semiconductor memory structure

Well pick-up region design for improving memory macro performance

Static random access memory cell

Manufacturing method of static random access memory cell

Well pick-up region design for improving memory macro performance

Compact electrical connection that can be used to form an SRAM cell and method of making the same

Static random access memory device with vertical FET devices

TAIWAN SEMICONDUCTOR MFG

Compact SRAM cell with FinFET

Static random access memory (SRAM) cell and method for forming same

Static random access memory (SRAM) cell and method for forming same

CHANG FENG-MING

SRAM timing tracking circuit

Active region patterning in double patterning processes

Multiple patterning technology method and system for achieving minimal pattern mismatch

WANG PING-WEI

Methods and apparatus for SRAM bit cell with low standby current, low supply voltage and high speed

YANG LIE-YONG

Static random access memory (SRAM) cell and method for forming same