Inventor
HA RYONG
KR17 patents
Patents
17 patentsUS10243045B2Mar 26, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations85
US10121791B2Nov 6, 2018
Multi-gate transistor
SAMSUNG ELECTRONICS CO LTD7 citations84
US11688778B2Jun 27, 2023
Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern
SAMSUNG ELECTRONICS CO LTD4 citations74
US12027596B2Jul 2, 2024
Semiconductor device with source/drain pattern including buffer layer
SAMSUNG ELECTRONICS CO LTD2 citations73
US11888026B2Jan 30, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations73
US12324195B2Jun 3, 2025
Multi-channel field effect transistors with enhanced multi-layered source/drain regions
SAMSUNG ELECTRONICS CO LTD1 citations62
US12396224B2Aug 19, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12142690B2Nov 12, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US11942551B2Mar 26, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US12289908B2Apr 29, 2025
Semiconductor device having multi-bridge channel field-effect transistor including source/drain pattern with a plurality of semiconductor patterns
SAMSUNG ELECTRONICS CO LTD0 citations60
US12021131B2Jun 25, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations60
US11676963B2Jun 13, 2023
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11264381B2Mar 1, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations58
US12538517B2Jan 27, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11990552B2May 21, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US12414337B2Sep 9, 2025
Semiconductor device including reflow layers
SAMSUNG ELECTRONICS CO LTD0 citations49
US9812557B2Nov 7, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations48