Inventor

CHEN KUEI-MING

TW22 patents

⚠️ This page may combine multiple inventors who share the name “CHEN KUEI-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN KUEI-MING

TAIWAN SEMICONDUCTOR MFG CO LTD

High electron mobility transistor (HEMT) device structure

Manufacturing method of semiconductor device

Rough buffer layer for group III-V devices on silicon

Substrate loss reduction for semiconductor devices

Multi-layer active layer having a partial recess

Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance

Source/drains in semiconductor devices and methods of forming thereof

Diffusion barrier layer for source and drain structures to increase transistor performance

Rough buffer layer for group III-V devices on silicon

Source/drains in semiconductor devices and methods of forming thereof

Manufacturing method of semiconductor device

Manufacturing method of semiconductor device

Gallium nitride drain structures and methods of forming the same

Substrate loss reduction for semiconductor devices

Diffusion barrier layer for source and drain structures to increase transistor performance

Rough buffer layer for group III-V devices on silicon

Source/drains in semiconductor devices and methods of forming thereof

Substrate loss reduction for semiconductor devices

Diffusion barrier layer for source and drain structures to increase transistor performance

Semiconductor structures with improved reliability

LEE WEI-I

Method for smoothing group III nitride semiconductor substrate

Method for treating group III nitride semiconductor