Inventor
TUNG I-CHENG
US17 patents
⚠️ This page may combine multiple inventors who share the name “TUNG I-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
14 patentsUS11316027B2Apr 26, 2022
Relaxor ferroelectric capacitors and methods of fabrication
INTEL CORP2 citations73
US12495559B2Dec 9, 2025
Capacitor with dual dielectric layers
INTEL CORP1 citations63
US12437929B2Oct 7, 2025
Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor
INTEL CORP0 citations62
US12224309B2Feb 11, 2025
Capacitors with built-in electric fields
INTEL CORP0 citations62
US12100731B2Sep 24, 2024
Crystalline bottom electrode for perovskite capacitors and methods of fabrication
INTEL CORP0 citations62
US11777029B2Oct 3, 2023
Vertical transistors for ultra-dense logic and memory applications
INTEL CORP0 citations62
US12568644B2Mar 3, 2026
Contact over active gate structures with trench contact layers for advanced integrated circuit structure fabrication
INTEL CORP0 citations61
US12255225B2Mar 18, 2025
Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes
INTEL CORP0 citations61
US12170319B2Dec 17, 2024
Dual contact process with stacked metal layers
INTEL CORP0 citations61
US12328927B2Jun 10, 2025
Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures
INTEL CORP0 citations51
US11980037B2May 7, 2024
Memory cells with ferroelectric capacitors separate from transistor gate stacks
INTEL CORP0 citations50
US11742407B2Aug 29, 2023
Multilayer high-k gate dielectric for a high performance logic transistor
INTEL CORP0 citations49
US12048165B2Jul 23, 2024
Ferroelectric capacitors and methods of fabrication
INTEL CORP0 citations48
US12183739B2Dec 31, 2024
Ribbon or wire transistor stack with selective dipole threshold voltage shifter
INTEL CORP0 citations47