Inventor
KAWAGUCHI YUSUKE
JP74 patents
⚠️ This page may combine multiple inventors who share the name “KAWAGUCHI YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
48 patentsUS6353252B1Mar 5, 2002
High breakdown voltage semiconductor device having trenched film connected to electrodes
TOSHIBA KK260 citations99
US6787848B2Sep 7, 2004
Vertical type power mosfet having trenched gate structure
TOSHIBA KK81 citations98
US6452231B1Sep 17, 2002
Semiconductor device
TOSHIBA KK94 citations98
US6297534B1Oct 2, 2001
Power semiconductor device
TOSHIBA KK122 citations98
US6614089B2Sep 2, 2003
Field effect transistor
TOSHIBA KK64 citations96
US6614077B2Sep 2, 2003
Semiconductor device improved in ESD reliability
TOSHIBA KK65 citations96
US5932897AAug 3, 1999
High-breakdown-voltage semiconductor device
TOSHIBA KK84 citations96
US5985708ANov 16, 1999
Method of manufacturing vertical power device
TOSHIBA KK73 citations95
US7541643B2Jun 2, 2009
Semiconductor device
TOSHIBA KK25 citations93
US7230297B2Jun 12, 2007
Trench-gated MOSFET including schottky diode therein
TOSHIBA KK28 citations93
US7061047B2Jun 13, 2006
Semiconductor device having trench gate structure and manufacturing method thereof
TOSHIBA KK26 citations93
US6838730B1Jan 4, 2005
Semiconductor device
TOSHIBA KK36 citations93
US6605844B2Aug 12, 2003
Semiconductor device
TOSHIBA KK31 citations93
US6563193B1May 13, 2003
Semiconductor device
TOSHIBA KK22 citations93
US6380566B1Apr 30, 2002
Semiconductor device having FET structure with high breakdown voltage
TOSHIBA KK44 citations93
US6118149ASep 12, 2000
Trench gate MOSFET
TOSHIBA KK55 citations93
US7910984B2Mar 22, 2011
Semiconductor device and method for manufacturing same
TOSHIBA KK21 citations92
US7872308B2Jan 18, 2011
Semiconductor device
TOSHIBA KK22 citations92
US7061060B2Jun 13, 2006
Offset-gate-type semiconductor device
TOSHIBA KK19 citations92
US6720618B2Apr 13, 2004
Power MOSFET device
TOSHIBA KK24 citations92
US6552389B2Apr 22, 2003
Offset-gate-type semiconductor device
TOSHIBA KK19 citations92
US6469346B1Oct 22, 2002
High-breakdown-voltage semiconductor device
TOSHIBA KK18 citations92
US6259136B1Jul 10, 2001
High-breakdown-voltage semiconductor device
TOSHIBA KK33 citations92
US8049270B2Nov 1, 2011
Semiconductor device
TOSHIBA KK16 citations84
US7564097B2Jul 21, 2009
Trench-gated MOSFET including schottky diode therein
TOSHIBA KK10 citations84
US7485921B2Feb 3, 2009
Trench gate type MOS transistor semiconductor device
TOSHIBA KK10 citations84
US7227225B2Jun 5, 2007
Semiconductor device having a vertical MOS trench gate structure
TOSHIBA KK12 citations84
US6977414B2Dec 20, 2005
Semiconductor device
TOSHIBA KK15 citations84
US6914294B2Jul 5, 2005
Semiconductor device
TOSHIBA KK15 citations84
US6864533B2Mar 8, 2005
MOS field effect transistor with reduced on-resistance
TOSHIBA KK20 citations84
US6818945B2Nov 16, 2004
Semiconductor device
TOSHIBA KK14 citations84
US10236377B2Mar 19, 2019
Semiconductor device
TOSHIBA KK8 citations83
US7633153B2Dec 15, 2009
Semiconductor module
TOSHIBA KK9 citations82
US7514783B2Apr 7, 2009
Semiconductor module
TOSHIBA KK15 citations82
US7115946B2Oct 3, 2006
MOS transistor having an offset region
TOSHIBA KK7 citations74
US7067876B2Jun 27, 2006
Semiconductor device
TOSHIBA KK9 citations74
US7045426B2May 16, 2006
Vertical type power MOSFET having trenched gate structure
TOSHIBA KK7 citations74
US6878992B2Apr 12, 2005
Vertical-type power MOSFET with a gate formed in a trench
TOSHIBA KK8 citations74
US6690085B2Feb 10, 2004
High-voltage semiconductor device used as switching element or the like
TOSHIBA KK8 citations74
US5777371AJul 7, 1998
High-breakdown-voltage semiconductor device
TOSHIBA KK13 citations74
USRE46311EFeb 14, 2017
Power semiconductor device
TOSHIBA KK4 citations73
US11489070B2Nov 1, 2022
Semiconductor device
TOSHIBA KK2 citations72
US10453957B2Oct 22, 2019
Semiconductor device
TOSHIBA KK4 citations71
US7663186B2Feb 16, 2010
Semiconductor device
TOSHIBA KK4 citations63
US7646059B2Jan 12, 2010
Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
TOSHIBA KK3 citations63
US7479678B2Jan 20, 2009
Semiconductor element and method of manufacturing the same
TOSHIBA KK4 citations63
US7061048B2Jun 13, 2006
Power MOSFET device
TOSHIBA KK2 citations63
US8008715B2Aug 30, 2011
Semiconductor device
TOSHIBA KK5 citations62
KAWAGUCHI YUSUKE
1 patentHITACHI CABLE
1 patentShowing the top 50 of 74 patents by PatentIndex Score.