P

Inventor

YAMAGUCHI YOSHIHIRO

JP267 patents
⚠️ This page may combine multiple inventors who share the name “YAMAGUCHI YOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

23 patents
US5635736AJun 3, 1997

MOS gate type semiconductor device

TOSHIBA KK165 citations99
US5105243AApr 14, 1992

Conductivity-modulation metal oxide field effect transistor with single gate structure

TOSHIBA KK165 citations99
US4672407AJun 9, 1987

Conductivity modulated MOSFET

TOSHIBA KK83 citations97
US5086332AFeb 4, 1992

Planar semiconductor device having high breakdown voltage

TOSHIBA KK60 citations96
US5068700ANov 26, 1991

Lateral conductivity modulated mosfet

TOSHIBA KK80 citations96
US4928155AMay 22, 1990

Lateral conductivity modulated MOSFET

TOSHIBA KK54 citations96
US4878957ANov 7, 1989

Dielectrically isolated semiconductor substrate

TOSHIBA KK90 citations96
US4782372ANov 1, 1988

Lateral conductivity modulated MOSFET

TOSHIBA KK33 citations96
US5985708ANov 16, 1999

Method of manufacturing vertical power device

TOSHIBA KK73 citations95
US7230297B2Jun 12, 2007

Trench-gated MOSFET including schottky diode therein

TOSHIBA KK28 citations93
US6879005B2Apr 12, 2005

High withstand voltage semiconductor device

TOSHIBA KK43 citations93
US6838730B1Jan 4, 2005

Semiconductor device

TOSHIBA KK36 citations93
US6650001B2Nov 18, 2003

Lateral semiconductor device and vertical semiconductor device

TOSHIBA KK17 citations93
US5981983ANov 9, 1999

High voltage semiconductor device

TOSHIBA KK26 citations93
US5828112AOct 27, 1998

Semiconductor device incorporating an output element having a current-detecting section

TOSHIBA KK41 citations93
US5708287AJan 13, 1998

Power semiconductor device having an active layer

TOSHIBA KK27 citations93
US5640040AJun 17, 1997

High breakdown voltage semiconductor device

TOSHIBA KK40 citations93
US5438220AAug 1, 1995

High breakdown voltage semiconductor device

TOSHIBA KK42 citations93
US4994904AFeb 19, 1991

MOSFET having drain voltage detection function

TOSHIBA KK35 citations93
US4980743ADec 25, 1990

Conductivity-modulation metal oxide semiconductor field effect transistor

TOSHIBA KK42 citations93
US4719531AJan 12, 1988

Overcurrent protective circuit for modulated-conductivity type MOSFET

TOSHIBA KK36 citations93
US7910984B2Mar 22, 2011

Semiconductor device and method for manufacturing same

TOSHIBA KK21 citations92
US7872308B2Jan 18, 2011

Semiconductor device

TOSHIBA KK22 citations92

SONY CORP

10 patents

KOMATSU MFG CO LTD

8 patents

KOMATSU IND CORP

5 patents

FUJI PHOTO FILM CO LTD

3 patents

KOJIMA PRESS KOGYO KK

1 patent

Showing the top 50 of 267 patents by PatentIndex Score.