Inventor
CALVIELLO JOSEPH A
33 patents
⚠️ This page may combine multiple inventors who share the name “CALVIELLO JOSEPH A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EATON CORP
28 patentsUS5356831AOct 18, 1994
Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
EATON CORP117 citations97
US5159413AOct 27, 1992
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
EATON CORP155 citations97
US5164359ANov 17, 1992
Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
EATON CORP78 citations94
US4692997ASep 15, 1987
Method for fabricating MOMOM tunnel emission transistor
EATON CORP26 citations92
US4624004ANov 18, 1986
Buried channel MESFET with backside source contact
EATON CORP28 citations92
US4620207AOct 28, 1986
Edge channel FET
EATON CORP27 citations92
US4789645ADec 6, 1988
Method for fabrication of monolithic integrated circuits
EATON CORP53 citations89
US4601096AJul 22, 1986
Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy
EATON CORP21 citations82
US4312113AJan 26, 1982
Method of making field-effect transistors with micron and submicron gate lengths
EATON CORP24 citations82
US4876176AOct 24, 1989
Method for fabricating quasi-monolithic integrated circuits
EATON CORP19 citations78
US5138406AAug 11, 1992
Ion implantation masking method and devices
EATON CORP7 citations74
US4935789AJun 19, 1990
Buried channel FET with lateral growth over amorphous region
EATON CORP20 citations74
US4724220AFeb 9, 1988
Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
EATON CORP9 citations74
US4683642AAug 4, 1987
Method for fabricating MOMS semiconductor device
EATON CORP8 citations74
US4674177AJun 23, 1987
Method for making an edge junction schottky diode
EATON CORP13 citations74
US4665413AMay 12, 1987
Edge junction schottky diode
EATON CORP12 citations74
US4630081ADec 16, 1986
MOMOM tunnel emission transistor
EATON CORP13 citations74
US4549194AOct 22, 1985
Light sensitive detector
EATON CORP16 citations74
US4312112AJan 26, 1982
Method of making field-effect transistors with micron and submicron gate lengths
EATON CORP10 citations74
US4310570AJan 12, 1982
Field-effect transistors with micron and submicron gate lengths
EATON CORP17 citations74
US4301233ANov 17, 1981
Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies
EATON CORP19 citations74
US5010036AApr 23, 1991
Low temperature semiconductor bonding process with chemical vapor reaction
EATON CORP11 citations72
US4935805AJun 19, 1990
T-type undercut electrical contact on a semiconductor substrate
EATON CORP13 citations72
US4923827AMay 8, 1990
T-type undercut electrical contact process on a semiconductor substrate
EATON CORP16 citations72
US5030579AJul 9, 1991
Method of making an FET by ion implantation through a partially opaque implant mask
EATON CORP4 citations63
US4837175AJun 6, 1989
Making a buried channel FET with lateral growth over amorphous region
EATON CORP3 citations63
US4833095AMay 23, 1989
Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
EATON CORP2 citations63
US4631560ADec 23, 1986
MOMS tunnel emission transistor
EATON CORP4 citations63