Inventor
KOSHINO YUTAKA
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KOSHINO YUTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
16 patentsUS5086332AFeb 4, 1992
Planar semiconductor device having high breakdown voltage
TOSHIBA KK60 citations96
US4710794ADec 1, 1987
Composite semiconductor device
TOSHIBA KK78 citations96
US5126817AJun 30, 1992
Dielectrically isolated structure for use in soi-type semiconductor device
TOSHIBA KK33 citations92
US5084408AJan 28, 1992
Method of making complete dielectric isolation structure in semiconductor integrated circuit
TOSHIBA KK36 citations92
US4968932ANov 6, 1990
Evaluation method for semiconductor device
TOSHIBA KK33 citations92
US4729966AMar 8, 1988
Process for manufacturing a Schottky FET device using metal sidewalls as gates
TOSHIBA KK29 citations92
US5229323AJul 20, 1993
Method for manufacturing a semiconductor device with Schottky electrodes
TOSHIBA KK23 citations91
US4532004AJul 30, 1985
Method of manufacturing a semiconductor device
TOSHIBA KK26 citations82
US5029324AJul 2, 1991
Semiconductor device having a semiconductive protection layer
TOSHIBA KK10 citations74
US4780426AOct 25, 1988
Method for manufacturing high-breakdown voltage semiconductor device
TOSHIBA KK17 citations74
US5637894AJun 10, 1997
Solid state image sensor device with single-layered transfer electrodes
TOSHIBA KK12 citations73
US5031021AJul 9, 1991
Semiconductor device with a high breakdown voltage
TOSHIBA KK14 citations73
US4984052AJan 8, 1991
Bonded substrate of semiconductor elements having a high withstand voltage
TOSHIBA KK15 citations73
US5049954ASep 17, 1991
GaAs field effect semiconductor device having Schottky gate structure
TOSHIBA KK10 citations72
US4700455AOct 20, 1987
Method of fabricating Schottky gate-type GaAs field effect transistor
TOSHIBA KK7 citations72
US4585489AApr 29, 1986
Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer
TOSHIBA KK8 citations70
TOKYO SHIBAURA ELECTRIC CO
10 patentsUS4351894ASep 28, 1982
Method of manufacturing a semiconductor device using silicon carbide mask
TOKYO SHIBAURA ELECTRIC CO24 citations81
US4502207AMar 5, 1985
Wiring material for semiconductor device and method for forming wiring pattern therewith
TOKYO SHIBAURA ELECTRIC CO8 citations74
US4479830AOct 30, 1984
Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker
TOKYO SHIBAURA ELECTRIC CO9 citations74
US4415372ANov 15, 1983
Method of making transistors by ion implantations, electron beam irradiation and thermal annealing
TOKYO SHIBAURA ELECTRIC CO7 citations74
US4566174AJan 28, 1986
Semiconductor device and method for manufacturing the same
TOKYO SHIBAURA ELECTRIC CO11 citations73
US4542400ASep 17, 1985
Semiconductor device with multi-layered structure
TOKYO SHIBAURA ELECTRIC CO19 citations73
US4560642ADec 24, 1985
Method of manufacturing a semiconductor device
TOKYO SHIBAURA ELECTRIC CO8 citations72
US4426234AJan 17, 1984
Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing
TOKYO SHIBAURA ELECTRIC CO6 citations63
US4404736ASep 20, 1983
Method for manufacturing a semiconductor device of mesa type
TOKYO SHIBAURA ELECTRIC CO3 citations63
US4515642AMay 7, 1985
Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby
TOKYO SHIBAURA ELECTRIC CO3 citations62