Inventor

AJIMA TAKASHI

JP17 patents

⚠️ This page may combine multiple inventors who share the name “AJIMA TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AJIMA TAKASHI

TOKYO SHIBAURA ELECTRIC CO

Method for forming metallization structure having flat surface on semiconductor substrate

Semiconductor device having insulating layer including polyimide film

Semiconductor device with an improved bonding section

Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat

Method of manufacturing a semiconductor device using silicon carbide mask

Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker

System for etching a metal film on a semiconductor wafer

Method of making transistors by ion implantations, electron beam irradiation and thermal annealing

Method of manufacturing a semiconductor device

Semiconductor device with thermally compensating SiO2 -silicate glass-SiC passivation layer

Method of producing semiconductor device

Method of producing a P-N junction utilizing polycrystalline silicon

Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing

Method for manufacturing a semiconductor device of mesa type

Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby

TOSHIBA KK

Semiconductor device having a multilayer wiring structure using a polyimide resin

Semiconductor device of multilayer wiring structure