Inventor

OHSHIMA JIRO

JP17 patents

⚠️ This page may combine multiple inventors who share the name “OHSHIMA JIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHSHIMA JIRO

TOSHIBA KK

Method of forming through holes by differential etching of stacked silicon oxynitride layers

Method of manufacturing super self-alignment technology bipolar transistor

Method of manufacturing bipolar transistor with self-aligned external base and emitter regions

Method of manufacturing semiconductor integrated circuit device having transistor

Method of manufacturing a semiconductor device with conductive trench sidewalls

Method of manufacturing a semiconductor device having a silicide layer

Method of gettering a semiconductor device and forming an isolation region therein

Method for manufacturing high-breakdown voltage semiconductor device

Method of manufacturing polycrystalline silicon having columnar orientation

TOKYO SHIBAURA ELECTRIC CO

Method of producing semiconductor device

Semiconductor device having insulating layer including polyimide film

Wiring material for semiconductor device and method for forming wiring pattern therewith

Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker

Method of making transistors by ion implantations, electron beam irradiation and thermal annealing

Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing

Method for manufacturing a semiconductor device of mesa type

Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby