Inventor

NIWAYAMA MASAHIKO

JP22 patents

⚠️ This page may combine multiple inventors who share the name “NIWAYAMA MASAHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NIWAYAMA MASAHIKO

PANASONIC CORP

Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer

Silicon carbide semiconductor element

Semiconductor device manufacturing method and ion implanter used therein

Silicon carbide semiconductor device and method for manufacturing same

Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Method for fabricating semiconductor device

Method and apparatus for fabricating semiconductor device

Apparatus and method for introducing impurity

Method for introducing impurity into a semiconductor substrate without negative charge buildup phenomenon

MATSUSHITA ELECTRONICS CORP

Solid-state imaging device and method of manufacturing the same

Solid-state image pick-up device and method for manufacturing the same

Solid-state image pick-up device and method for manufacturing the same

Solid-state imaging device and method of manufacturing the same

KUDOU CHIAKI

Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof

Semiconductor device and process for production thereof

NIWAYAMA MASAHIKO

Semiconductor manufacturing apparatus

Semiconductor element, semiconductor device, and semiconductor element manufacturing method

TAKAHASHI KUNIMASA

Silicon carbide semiconductor element

IKEGAMI RYO

Semiconductor element and method of manufacturing thereof

TANAKA KOUTAROU

Method for producing semiconductor element

PANASONIC IP MAN CO LTD

Semiconductor device having a temperature sensor