P

Inventor

MORISHITA FUKASHI

JP108 patents
⚠️ This page may combine multiple inventors who share the name “MORISHITA FUKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

33 patents
US5877978AMar 2, 1999

Semiconductor memory device

MITSUBISHI ELECTRIC CORP314 citations99
US6519191B1Feb 11, 2003

Semiconductor integrated circuit device having an internal voltage generation circuit layout easily adaptable to change in specification

MITSUBISHI ELECTRIC CORP95 citations98
US6184744B1Feb 6, 2001

Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage

MITSUBISHI ELECTRIC CORP88 citations98
US6064621AMay 16, 2000

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

MITSUBISHI ELECTRIC CORP103 citations98
US6154411ANov 28, 2000

Boosting circuit compensating for voltage fluctuation due to operation of load

MITSUBISHI ELECTRIC CORP58 citations96
US6081443AJun 27, 2000

Semiconductor memory device

MITSUBISHI ELECTRIC CORP246 citations96
US6038189AMar 14, 2000

Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing

MITSUBISHI ELECTRIC CORP47 citations96
US5914907AJun 22, 1999

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

MITSUBISHI ELECTRIC CORP69 citations96
US6483357B2Nov 19, 2002

Semiconductor device reduced in through current

MITSUBISHI ELECTRIC CORP24 citations93
US6434078B1Aug 13, 2002

Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing

MITSUBISHI ELECTRIC CORP22 citations93
US6407538B1Jun 18, 2002

Voltage down converter allowing supply of stable internal power supply voltage

MITSUBISHI ELECTRIC CORP30 citations93
US6329873B2Dec 11, 2001

Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage

MITSUBISHI ELECTRIC CORP19 citations93
US6246280B1Jun 12, 2001

Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same

MITSUBISHI ELECTRIC CORP22 citations93
US5917765AJun 29, 1999

Semiconductor memory device capable of burn in mode operation

MITSUBISHI ELECTRIC CORP42 citations93
US5909046AJun 1, 1999

Semiconductor integrated circuit device having stable input protection circuit

MITSUBISHI ELECTRIC CORP19 citations93
US5757175AMay 26, 1998

Constant current generating circuit

MITSUBISHI ELECTRIC CORP27 citations93
US5694364ADec 2, 1997

Semiconductor integrated circuit device having a test mode for reliability evaluation

MITSUBISHI ELECTRIC CORP46 citations93
US6700434B2Mar 2, 2004

Substrate bias voltage generating circuit

MITSUBISHI ELECTRIC CORP39 citations92
US6515461B2Feb 4, 2003

Voltage downconverter circuit capable of reducing current consumption while keeping response rate

MITSUBISHI ELECTRIC CORP27 citations92
US6472926B2Oct 29, 2002

Internal voltage generation circuit

MITSUBISHI ELECTRIC CORP49 citations92
US6429729B2Aug 6, 2002

Semiconductor integrated circuit device having circuit generating reference voltage

MITSUBISHI ELECTRIC CORP20 citations92
US6414881B1Jul 2, 2002

Semiconductor device capable of generating internal voltage effectively

MITSUBISHI ELECTRIC CORP45 citations92
US6373763B1Apr 16, 2002

Semiconductor memory provided with data-line equalizing circuit

MITSUBISHI ELECTRIC CORP20 citations92
US6333669B1Dec 25, 2001

Voltage converting circuit allowing control of current drivability in accordance with operational frequency

MITSUBISHI ELECTRIC CORP27 citations92
US6215720B1Apr 10, 2001

High speed operable semiconductor memory device with memory blocks arranged about the center

MITSUBISHI ELECTRIC CORP18 citations92
US6072743AJun 6, 2000

High speed operable semiconductor memory device with memory blocks arranged about the center

MITSUBISHI ELECTRIC CORP35 citations92
US5867418AFeb 2, 1999

Semiconductor memory device and semiconductor device

MITSUBISHI ELECTRIC CORP17 citations92
US6614270B2Sep 2, 2003

Potential detecting circuit having wide operating margin and semiconductor device including the same

MITSUBISHI ELECTRIC CORP18 citations84
US6501326B2Dec 31, 2002

Semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP17 citations84
US6424134B2Jul 23, 2002

Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltage

MITSUBISHI ELECTRIC CORP17 citations84
US6392472B1May 21, 2002

Constant internal voltage generation circuit

MITSUBISHI ELECTRIC CORP20 citations84
US6323689B1Nov 27, 2001

Semiconductor integrated circuit including output buffer circuit having high resistance to electro-static discharge

MITSUBISHI ELECTRIC CORP19 citations84
US6272034B1Aug 7, 2001

Semiconductor memory device

MITSUBISHI ELECTRIC CORP16 citations84

RENESAS TECH CORP

13 patents
US7738312B2Jun 15, 2010

Semiconductor memory device

RENESAS TECH CORP53 citations94
US7157773B2Jan 2, 2007

Nonvolatile semiconductor memory device

RENESAS TECH CORP26 citations93
US7095272B2Aug 22, 2006

Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage

RENESAS TECH CORP29 citations93
US6963230B2Nov 8, 2005

Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage

RENESAS TECH CORP13 citations93
US7030681B2Apr 18, 2006

Semiconductor device with multiple power sources

RENESAS TECH CORP45 citations92
US6781431B2Aug 24, 2004

Clock generating circuit

RENESAS TECH CORP21 citations92
US6768354B2Jul 27, 2004

Multi-power semiconductor integrated circuit device

RENESAS TECH CORP38 citations92
US7456680B2Nov 25, 2008

Internal voltage generating circuit and semiconductor integrated circuit device

RENESAS TECH CORP21 citations90
US7479820B2Jan 20, 2009

Semiconductor device including detector circuit capable of performing high-speed operation

RENESAS TECH CORP12 citations83
US7064993B2Jun 20, 2006

Semiconductor memory device with common I/O type circuit configuration achieving write before sense operation

RENESAS TECH CORP14 citations82
US7430149B2Sep 30, 2008

Semiconductor device

RENESAS TECH CORP8 citations74
US7291538B2Nov 6, 2007

Semiconductor memory device and manufacturing method of the same

RENESAS TECH CORP8 citations74
US6819619B2Nov 16, 2004

Semiconductor memory device allowing reduction of an area loss

RENESAS TECH CORP8 citations74

WATANABE NAOYA

1 patent

RENESAS ELECTRONICS CORP

1 patent

EZUMI YOSHIYUKI

1 patent

MITSUBISHI ELECTRIC ENG

1 patent

Showing the top 50 of 108 patents by PatentIndex Score.