Inventor
MORISHITA FUKASHI
JP108 patents
⚠️ This page may combine multiple inventors who share the name “MORISHITA FUKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
33 patentsUS5877978AMar 2, 1999
Semiconductor memory device
MITSUBISHI ELECTRIC CORP314 citations99
US6519191B1Feb 11, 2003
Semiconductor integrated circuit device having an internal voltage generation circuit layout easily adaptable to change in specification
MITSUBISHI ELECTRIC CORP95 citations98
US6184744B1Feb 6, 2001
Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage
MITSUBISHI ELECTRIC CORP88 citations98
US6064621AMay 16, 2000
Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement
MITSUBISHI ELECTRIC CORP103 citations98
US6154411ANov 28, 2000
Boosting circuit compensating for voltage fluctuation due to operation of load
MITSUBISHI ELECTRIC CORP58 citations96
US6081443AJun 27, 2000
Semiconductor memory device
MITSUBISHI ELECTRIC CORP246 citations96
US6038189AMar 14, 2000
Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing
MITSUBISHI ELECTRIC CORP47 citations96
US5914907AJun 22, 1999
Semiconductor memory device capable of increasing chip yields while maintaining rapid operation
MITSUBISHI ELECTRIC CORP69 citations96
US6483357B2Nov 19, 2002
Semiconductor device reduced in through current
MITSUBISHI ELECTRIC CORP24 citations93
US6434078B1Aug 13, 2002
Semiconductor device allowing external setting of internal power supply voltage generated by a voltage down converter at the time of testing
MITSUBISHI ELECTRIC CORP22 citations93
US6407538B1Jun 18, 2002
Voltage down converter allowing supply of stable internal power supply voltage
MITSUBISHI ELECTRIC CORP30 citations93
US6329873B2Dec 11, 2001
Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage
MITSUBISHI ELECTRIC CORP19 citations93
US6246280B1Jun 12, 2001
Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same
MITSUBISHI ELECTRIC CORP22 citations93
US5917765AJun 29, 1999
Semiconductor memory device capable of burn in mode operation
MITSUBISHI ELECTRIC CORP42 citations93
US5909046AJun 1, 1999
Semiconductor integrated circuit device having stable input protection circuit
MITSUBISHI ELECTRIC CORP19 citations93
US5757175AMay 26, 1998
Constant current generating circuit
MITSUBISHI ELECTRIC CORP27 citations93
US5694364ADec 2, 1997
Semiconductor integrated circuit device having a test mode for reliability evaluation
MITSUBISHI ELECTRIC CORP46 citations93
US6700434B2Mar 2, 2004
Substrate bias voltage generating circuit
MITSUBISHI ELECTRIC CORP39 citations92
US6515461B2Feb 4, 2003
Voltage downconverter circuit capable of reducing current consumption while keeping response rate
MITSUBISHI ELECTRIC CORP27 citations92
US6472926B2Oct 29, 2002
Internal voltage generation circuit
MITSUBISHI ELECTRIC CORP49 citations92
US6429729B2Aug 6, 2002
Semiconductor integrated circuit device having circuit generating reference voltage
MITSUBISHI ELECTRIC CORP20 citations92
US6414881B1Jul 2, 2002
Semiconductor device capable of generating internal voltage effectively
MITSUBISHI ELECTRIC CORP45 citations92
US6373763B1Apr 16, 2002
Semiconductor memory provided with data-line equalizing circuit
MITSUBISHI ELECTRIC CORP20 citations92
US6333669B1Dec 25, 2001
Voltage converting circuit allowing control of current drivability in accordance with operational frequency
MITSUBISHI ELECTRIC CORP27 citations92
US6215720B1Apr 10, 2001
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP18 citations92
US6072743AJun 6, 2000
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP35 citations92
US5867418AFeb 2, 1999
Semiconductor memory device and semiconductor device
MITSUBISHI ELECTRIC CORP17 citations92
US6614270B2Sep 2, 2003
Potential detecting circuit having wide operating margin and semiconductor device including the same
MITSUBISHI ELECTRIC CORP18 citations84
US6501326B2Dec 31, 2002
Semiconductor integrated circuit
MITSUBISHI ELECTRIC CORP17 citations84
US6424134B2Jul 23, 2002
Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltage
MITSUBISHI ELECTRIC CORP17 citations84
US6392472B1May 21, 2002
Constant internal voltage generation circuit
MITSUBISHI ELECTRIC CORP20 citations84
US6323689B1Nov 27, 2001
Semiconductor integrated circuit including output buffer circuit having high resistance to electro-static discharge
MITSUBISHI ELECTRIC CORP19 citations84
US6272034B1Aug 7, 2001
Semiconductor memory device
MITSUBISHI ELECTRIC CORP16 citations84
RENESAS TECH CORP
13 patentsUS7738312B2Jun 15, 2010
Semiconductor memory device
RENESAS TECH CORP53 citations94
US7157773B2Jan 2, 2007
Nonvolatile semiconductor memory device
RENESAS TECH CORP26 citations93
US7095272B2Aug 22, 2006
Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage
RENESAS TECH CORP29 citations93
US6963230B2Nov 8, 2005
Internal power supply voltage generation circuit that can suppress reduction in internal power supply voltage in neighborhood of lower limit region of external power supply voltage
RENESAS TECH CORP13 citations93
US7030681B2Apr 18, 2006
Semiconductor device with multiple power sources
RENESAS TECH CORP45 citations92
US6781431B2Aug 24, 2004
Clock generating circuit
RENESAS TECH CORP21 citations92
US6768354B2Jul 27, 2004
Multi-power semiconductor integrated circuit device
RENESAS TECH CORP38 citations92
US7456680B2Nov 25, 2008
Internal voltage generating circuit and semiconductor integrated circuit device
RENESAS TECH CORP21 citations90
US7479820B2Jan 20, 2009
Semiconductor device including detector circuit capable of performing high-speed operation
RENESAS TECH CORP12 citations83
US7064993B2Jun 20, 2006
Semiconductor memory device with common I/O type circuit configuration achieving write before sense operation
RENESAS TECH CORP14 citations82
US7430149B2Sep 30, 2008
Semiconductor device
RENESAS TECH CORP8 citations74
US7291538B2Nov 6, 2007
Semiconductor memory device and manufacturing method of the same
RENESAS TECH CORP8 citations74
US6819619B2Nov 16, 2004
Semiconductor memory device allowing reduction of an area loss
RENESAS TECH CORP8 citations74
WATANABE NAOYA
1 patentRENESAS ELECTRONICS CORP
1 patentEZUMI YOSHIYUKI
1 patentMITSUBISHI ELECTRIC ENG
1 patentShowing the top 50 of 108 patents by PatentIndex Score.