P

Inventor

FOOTE DAVID K

US40 patents
⚠️ This page may combine multiple inventors who share the name “FOOTE DAVID K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

34 patents
US6406960B1Jun 18, 2002

Process for fabricating an ONO structure having a silicon-rich silicon nitride layer

ADVANCED MICRO DEVICES INC83 citations98
US6218292B1Apr 17, 2001

Dual layer bottom anti-reflective coating

ADVANCED MICRO DEVICES INC93 citations98
US5710067AJan 20, 1998

Silicon oxime film

ADVANCED MICRO DEVICES INC171 citations98
US6458677B1Oct 1, 2002

Process for fabricating an ONO structure

ADVANCED MICRO DEVICES INC57 citations96
US6040619AMar 21, 2000

Semiconductor device including antireflective etch stop layer

ADVANCED MICRO DEVICES INC67 citations95
US6248628B1Jun 19, 2001

Method of fabricating an ONO dielectric by nitridation for MNOS memory cells

ADVANCED MICRO DEVICES INC68 citations94
US6365320B1Apr 2, 2002

Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography

ADVANCED MICRO DEVICES INC24 citations93
US6121663ASep 19, 2000

Local interconnects for improved alignment tolerance and size reduction

ADVANCED MICRO DEVICES INC16 citations93
US6562683B1May 13, 2003

Bit-line oxidation by removing ONO oxide prior to bit-line implant

ADVANCED MICRO DEVICES INC49 citations92
US6528390B2Mar 4, 2003

Process for fabricating a non-volatile memory device

ADVANCED MICRO DEVICES INC44 citations92
US6436766B1Aug 20, 2002

Process for fabricating high density memory cells using a polysilicon hard mask

ADVANCED MICRO DEVICES INC36 citations92
US6410388B1Jun 25, 2002

Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor device

ADVANCED MICRO DEVICES INC39 citations92
US6399446B1Jun 4, 2002

Process for fabricating high density memory cells using a metallic hard mask

ADVANCED MICRO DEVICES INC21 citations92
US6395644B1May 28, 2002

Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARC

ADVANCED MICRO DEVICES INC26 citations92
US6313018B1Nov 6, 2001

Process for fabricating semiconductor device including antireflective etch stop layer

ADVANCED MICRO DEVICES INC20 citations92
US6297143B1Oct 2, 2001

Process for forming a bit-line in a MONOS device

ADVANCED MICRO DEVICES INC30 citations92
US6248635B1Jun 19, 2001

Process for fabricating a bit-line in a monos device using a dual layer hard mask

ADVANCED MICRO DEVICES INC36 citations92
US6114235ASep 5, 2000

Multipurpose cap layer dielectric

ADVANCED MICRO DEVICES INC32 citations92
US6022799AFeb 8, 2000

Methods for making a semiconductor device with improved hot carrier lifetime

ADVANCED MICRO DEVICES INC24 citations92
US5990524ANov 23, 1999

Silicon oxime spacer for preventing over-etching during local interconnect formation

ADVANCED MICRO DEVICES INC40 citations92
US5989957ANov 23, 1999

Process for fabricating semiconductor memory device with high data retention including silicon oxynitride etch stop layer formed at high temperature with low hydrogen ion concentration

ADVANCED MICRO DEVICES INC27 citations92
US5963841AOct 5, 1999

Gate pattern formation using a bottom anti-reflective coating

ADVANCED MICRO DEVICES INC45 citations92
US6903007B1Jun 7, 2005

Process for forming bottom anti-reflection coating for semiconductor fabrication photolithography which inhibits photoresist footing

ADVANCED MICRO DEVICES INC12 citations84
US6399480B1Jun 4, 2002

Methods and arrangements for insulating local interconnects for improved alignment tolerance and size reduction

ADVANCED MICRO DEVICES INC7 citations74
US6242305B1Jun 5, 2001

Process for fabricating a bit-line using buried diffusion isolation

ADVANCED MICRO DEVICES INC10 citations74
US6103611AAug 15, 2000

Methods and arrangements for improved spacer formation within a semiconductor device

ADVANCED MICRO DEVICES INC13 citations74
US5895269AApr 20, 1999

Methods for preventing deleterious punch-through during local interconnect formation

ADVANCED MICRO DEVICES INC15 citations74
US6168993B1Jan 2, 2001

Process for fabricating a semiconductor device having a graded junction

ADVANCED MICRO DEVICES INC11 citations73
US6060393AMay 9, 2000

Deposition control of stop layer and dielectric layer for use in the formation of local interconnects

ADVANCED MICRO DEVICES INC4 citations63
US6376308B1Apr 23, 2002

Process for fabricating an EEPROM device having a pocket substrate region

ADVANCED MICRO DEVICES INC4 citations62
US6207502B1Mar 27, 2001

Method of using source/drain nitride for periphery field oxide and bit-line oxide

ADVANCED MICRO DEVICES INC5 citations62
US6486029B1Nov 26, 2002

Integration of an ion implant hard mask structure into a process for fabricating high density memory cells

ADVANCED MICRO DEVICES INC6 citations60
US6380588B1Apr 30, 2002

Semiconductor device having uniform spacers

ADVANCED MICRO DEVICES INC4 citations60
US6063665AMay 16, 2000

Method for silicon surface control for shallow junction formation

ADVANCED MICRO DEVICES INC0 citations52

KEWAUNEE SCIENT CORP

2 patents

FOOTE DAVID K

2 patents

FAZIO JAMES P

1 patent

NORDSON CORP

1 patent