P

Inventor

LEE RAYMOND T

US20 patents
⚠️ This page may combine multiple inventors who share the name “LEE RAYMOND T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

19 patents
US5674781AOct 7, 1997

Landing pad technology doubled up as a local interconnect and borderless contact for deep sub-half micrometer IC application

ADVANCED MICRO DEVICES INC69 citations96
US5654589AAug 5, 1997

Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application

ADVANCED MICRO DEVICES INC96 citations96
US6479350B1Nov 12, 2002

Reduced masking step CMOS transistor formation using removable amorphous silicon sidewall spacers

ADVANCED MICRO DEVICES INC46 citations92
US6287904B1Sep 11, 2001

Two step mask process to eliminate gate end cap shortening

ADVANCED MICRO DEVICES INC34 citations92
US6218224B1Apr 17, 2001

Nitride disposable spacer to reduce mask count in CMOS transistor formation

ADVANCED MICRO DEVICES INC26 citations92
US6114235ASep 5, 2000

Multipurpose cap layer dielectric

ADVANCED MICRO DEVICES INC32 citations92
US6103563AAug 15, 2000

Nitride disposable spacer to reduce mask count in CMOS transistor formation

ADVANCED MICRO DEVICES INC27 citations92
US6051881AApr 18, 2000

Forming local interconnects in integrated circuits

ADVANCED MICRO DEVICES INC32 citations92
US5879980AMar 9, 1999

Method of making static random access memory cell having a trench field plate for increased capacitance

ADVANCED MICRO DEVICES INC28 citations92
US5796651AAug 18, 1998

Memory device using a reduced word line voltage during read operations and a method of accessing such a memory device

ADVANCED MICRO DEVICES INC25 citations92
US5627110AMay 6, 1997

Method for eliminating window mask process in the fabrication of a semiconductor wafer when chemical-mechanical polish planarization is used

ADVANCED MICRO DEVICES INC47 citations92
US6146954ANov 14, 2000

Minimizing transistor size in integrated circuits

ADVANCED MICRO DEVICES INC18 citations84
US6046088AApr 4, 2000

Method for self-aligning polysilicon gates with field isolation and the resultant structure

ADVANCED MICRO DEVICES INC19 citations84
US5844836ADec 1, 1998

Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell

ADVANCED MICRO DEVICES INC17 citations83
US6214655B1Apr 10, 2001

Amorphous silicon disposable spacer to reduce mask count in CMOS transistor formation

ADVANCED MICRO DEVICES INC8 citations73
US6191034B1Feb 20, 2001

Forming minimal size spaces in integrated circuit conductive lines

ADVANCED MICRO DEVICES INC7 citations73
US7026691B1Apr 11, 2006

Minimizing transistor size in integrated circuits

ADVANCED MICRO DEVICES INC10 citations71
US6287953B1Sep 11, 2001

Minimizing transistor size in integrated circuits

ADVANCED MICRO DEVICES INC12 citations71
US6221706B1Apr 24, 2001

Aluminum disposable spacer to reduce mask count in CMOS transistor formation

ADVANCED MICRO DEVICES INC6 citations63

ADVANCED MICRODEVICES INC

1 patent