Inventor

BABCOCK JEFFREY A

DE46 patents

⚠️ This page may combine multiple inventors who share the name “BABCOCK JEFFREY A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BABCOCK JEFFREY A

TEXAS INSTRUMENTS INC

Advanced CMOS using super steep retrograde wells

Advanced CMOS using super steep retrograde wells

Advanced CMOS using super steep retrograde wells

Advanced CMOS using super steep retrograde wells

Advanced CMOS using super steep retrograde wells

Programmable neuron MOSFET on SOI

Method of manufacturing a zero mask high density metal/insulator/metal capacitor

RF voltage controlled capacitor on thick-film SOI

On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits

Integrated process for high voltage and high performance silicon-on-insulator bipolar devices

Integrated process for high voltage and high performance silicon-on-insulator bipolar devices

P-i-n transit time silicon-on-insulator device

Zero mask high density metal/insulator/metal capacitor

Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect

Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect

Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies

BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistor

Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies

On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits

Lateral heterojunction bipolar transistor

Integrated circuit with resurf region biasing under buried insulator layers

Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer

Structure of semiconductor device with sinker contact region

Method for manufacturing a semiconductor device with sinker contact region

Semiconductor device with a collector contact in a depressed well-region

Integrated circuit with resurf region biasing under buried insulator layers

Integrated circuit with resurf region biasing under buried insulator layers

HV complementary bipolar transistors with lateral collectors on SOI with resurf regions under buried oxide

Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effect

Lateral heterojunction bipolar transistor

Semiconductor devices for high frequency applications

BABCOCK JEFFREY A

Advanced CMOS using super steep retrograde wells

Control of dopant diffusion from buried layers in bipolar integrated circuits

Advanced CMOS using super steep retrograde wells

Non-volatile memory cell having a heating element and a substrate-based control gate

Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product

SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region

Non-volatile memory cell having a heating element and a substrate-based control gate

Gas detector that utilizes an electric field to assist in the collection and removal of gas molecules

Schottky-clamped bipolar transistor with reduced self heating

NAT SEMICONDUCTOR CORP

Method of forming a semiconductor die with reduced RF attenuation

Non-volatile memory cell with heating element

Semiconductor die with reduced RF attenuation

SHAFI ZIA ALAN

Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown

Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown