Inventor
CHIANG AN-MIN
TW14 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG AN-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
13 patentsUS6350127B1Feb 26, 2002
Method of manufacturing for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG33 citations92
US5449639ASep 12, 1995
Disposable metal anti-reflection coating process used together with metal dry/wet etch
TAIWAN SEMICONDUCTOR MFG104 citations92
US6514785B1Feb 4, 2003
CMOS image sensor n-type pin-diode structure
TAIWAN SEMICONDUCTOR MFG44 citations91
US6306678B1Oct 23, 2001
Process for fabricating a high quality CMOS image sensor
TAIWAN SEMICONDUCTOR MFG21 citations91
US5753548AMay 19, 1998
Method for preventing fluorine outgassing-induced interlevel dielectric delamination on P-channel FETS
TAIWAN SEMICONDUCTOR MFG21 citations91
US5915178AJun 22, 1999
Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region
TAIWAN SEMICONDUCTOR MFG26 citations86
US6534356B1Mar 18, 2003
Method of reducing dark current for an image sensor device via use of a polysilicon pad
TAIWAN SEMICONDUCTOR MFG17 citations83
US5700739ADec 23, 1997
Method of multi-step reactive ion etch for patterning adjoining semiconductor metallization layers
TAIWAN SEMICONDUCTOR MFG14 citations73
US7247909B2Jul 24, 2007
Method for forming an integrated circuit with high voltage and low voltage devices
TAIWAN SEMICONDUCTOR MFG7 citations71
US5811343ASep 22, 1998
Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric
TAIWAN SEMICONDUCTOR MFG14 citations69
US5652172AJul 29, 1997
Method for controlling the etch profile of an aperture formed through a multi-layer insulator layer
TAIWAN SEMICONDUCTOR MFG14 citations68
US6159660ADec 12, 2000
Opposite focus control to avoid keyholes inside a passivation layer
TAIWAN SEMICONDUCTOR MFG2 citations61
US7911022B2Mar 22, 2011
Isolation structure in field device
TAIWAN SEMICONDUCTOR MFG0 citations41